李思, 杨明, 马宇, 宋天佑, 徐殿国. 结构简单的并联谐振直流环节型逆变器及其调制策略研究[J]. 中国电机工程学报, 2023, 43(18): 7202-7214. DOI: 10.13334/j.0258-8013.pcsee.221212
引用本文: 李思, 杨明, 马宇, 宋天佑, 徐殿国. 结构简单的并联谐振直流环节型逆变器及其调制策略研究[J]. 中国电机工程学报, 2023, 43(18): 7202-7214. DOI: 10.13334/j.0258-8013.pcsee.221212
LI Si, YANG Ming, MA Yu, SONG Tianyou, XU Dianguo. Parallel Resonant DC Link Inverter With Simple Structure and Its Modulation Strategy Research[J]. Proceedings of the CSEE, 2023, 43(18): 7202-7214. DOI: 10.13334/j.0258-8013.pcsee.221212
Citation: LI Si, YANG Ming, MA Yu, SONG Tianyou, XU Dianguo. Parallel Resonant DC Link Inverter With Simple Structure and Its Modulation Strategy Research[J]. Proceedings of the CSEE, 2023, 43(18): 7202-7214. DOI: 10.13334/j.0258-8013.pcsee.221212

结构简单的并联谐振直流环节型逆变器及其调制策略研究

Parallel Resonant DC Link Inverter With Simple Structure and Its Modulation Strategy Research

  • 摘要: 针对一种新型并联谐振直流环节逆变器的辅助换流电路存在的电流应力高、导通损耗大、元器件数目多等问题,该文提出一种优化改进调制策略,其由3部分组成:基于1型不连续的脉冲宽度调制策略,且以斜率正负交替的锯齿波作为载波,在此二者基础上施用分流死区。在所提调制策略下可以对原拓扑的辅助换流电路进行化简,减少一组谐振电路,以降低硬件成本。与原调制策略相比,所提调制策略在不改变辅助换流电路动作频率的前提下,不仅可以实现所有开关器件的软开关动作,而且可以避免辅助换流电路工作过程中产生的谐振电流与负载电流的叠加,从而有效降低辅助换流电路的导通损耗及其内部开关器件的电流应力。文中对所提调制策略的原理进行详细叙述,由此推导简化拓扑的工作模式,并分析其电压/电流应力、元器件数目、参数设计等特性,最后通过一台通用实验样机(SiC MOSFET,5kW/40kHz),对比于原拓扑及原调制策略,以验证所提理论的有效性。

     

    Abstract: Aiming to address the problems of high current stress, large conduction loss, and too many components in the auxiliary commutated circuit (ACC) of the novel parallel resonant DC link inverter (PRDCLI), this paper proposes an improved modulation strategy. It consists of three parts: based on type 1 discontinuous pulse width modulation (DPWM1) strategy, using a sawtooth wave with alternating positive and negative slopes as the carrier, and applying shunt dead zone based on the above two strategies. Under the proposed modulation strategy, the ACC of the original topology can be simplified, and a group of resonant circuit can be saved to reduce hardware cost. Compared with the original modulation strategy, the proposed modulation strategy can not only realize soft-switching of all switching devices without changing the operation frequency of the ACC but also avoid the superposition of resonant current generated in the operation process of the ACC and load current, effectively reducing the conduction loss of the ACC and the current stress of its internal switching devices. This paper describes the principle of the proposed modulation strategy in detail, from which the operation mode of simplified topology is derived, and its characteristics such as voltage/current stress, component number, parameter design are analyzed. Finally, a general experimental prototype (SiC MOSFET, 5kW/40kHz) is used to compare the original topology and modulation strategy to verify the effectiveness of the proposed theory.

     

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