刘基业, 郑泽东, 李驰, 王奎, 李永东. 基于准串联SiC MOSFET的高增益直流电力电子变压器[J]. 中国电机工程学报, 2022, 42(8): 2987-2996. DOI: 10.13334/j.0258-8013.pcsee.220327
引用本文: 刘基业, 郑泽东, 李驰, 王奎, 李永东. 基于准串联SiC MOSFET的高增益直流电力电子变压器[J]. 中国电机工程学报, 2022, 42(8): 2987-2996. DOI: 10.13334/j.0258-8013.pcsee.220327
LIU Jiye, ZHENG Zedong, LI Chi, WANG Kui, LI Yongdong. A High Voltage-gain DC Power Electronic Transformer Based on Quasi-Series-Connected SiC MOSFET[J]. Proceedings of the CSEE, 2022, 42(8): 2987-2996. DOI: 10.13334/j.0258-8013.pcsee.220327
Citation: LIU Jiye, ZHENG Zedong, LI Chi, WANG Kui, LI Yongdong. A High Voltage-gain DC Power Electronic Transformer Based on Quasi-Series-Connected SiC MOSFET[J]. Proceedings of the CSEE, 2022, 42(8): 2987-2996. DOI: 10.13334/j.0258-8013.pcsee.220327

基于准串联SiC MOSFET的高增益直流电力电子变压器

A High Voltage-gain DC Power Electronic Transformer Based on Quasi-Series-Connected SiC MOSFET

  • 摘要: 直流配电技术相较于交流配电有诸多优势,其在深海设备供电应用中有广阔前景。该文提出一种基于准串联碳化硅(silicon carbide,SiC)金属–氧化物半导体场效应晶体管(metal-oxide-semiconductor field-effect transistor,MOSFET)的直流电力电子变压器(power electronic transformer,PET),能够在体积受限的条件下,实现几千伏中压直流到几百伏低压直流的高增益隔离电能变换。直流PET通过多个隔离降压子模块在输入端串联–输出端并联实现高电压增益。为满足输入侧高电压的需求,同时降低直流PET体积,在输入侧采用准串联SiC MOSFET半桥结构,提高子模块输入电压等级,减少子模块数量。采用裸芯片对直流PET进行搭建,并采用绝缘冷却液浸泡的方式,实现直流PET的绝缘和散热,进一步减小绝缘、散热体积,满足深海场景体积受限的应用需求。最后,搭建1台4.5kV/680V/30kW实验样机验证所提方案的可行性。

     

    Abstract: Compared with alternating current (AC) power distribution systems, direct current (DC) power distribution systems have many advantages, and broad prospects in the deep-sea power supply. This paper presented a DC power electronic transformer (PET) based on quasi series-connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), which can realize high gain isolated power conversion from medium DC voltage (thousands of volts) to low DC voltage (hundreds of volts) under the condition of limited volume. The DC PET can realize high voltage gain with input-series output-parallel connection of multiple isolated buck submodules. In order to match the high voltage on the input side and reduce the volume, a quasi-series-connected SiC MOSFET half-bridge was adopted to improve the input voltage level of submodules and reduce the number of sub modules. In addition, this paper also utilized the bare dies to build the DC PET. Dielectric liquid was adopted to strengthen the insulation and heat dissipation of the DC PET, which further reduced the volume to meet the requirements of in deep-sea applications. A 4.5kV/680V/30kW prototype was built and verified by experiments.

     

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