Abstract: Fully-controlled press-pack devices are the core components of large-capacity power electronic equipment for power conversion, mainly including thyristor-like devices such as integrated gate commutated thyristor (IGCT), and transistor-like devices such as insulated gate bipolar transistor (IGBT) and injection enhanced gate transistor (IEGT). This paper firstly introduced and compared chip structures and manufacturing processes of IGCT and IGBT (including IEGT). Then, the working principles and packaging structures of IGCT and IGBT (including IEGT) were analyzed and compared. After that, the working characteristics of different fully-controlled press-pack devices were analyzed systematically from nine aspects including working frequency, turn-off capability, dynamic tolerance, device capacity, operating loss, gate driver power, housing package explosion proof, short circuit failure mode (SCFM), and device reliability. Finally, the application status and application forecast of fully-controlled press-pack devices were summarized and prospected.