Abstract: In order to reduce the switching time and on-resistance of silicon carbide (SiC) based metal-oxide- semiconductor field-effect transistor (MOSFET) to improve the efficiency, it is generally recommended to use lower driving resistance and higher driving voltage. However, due to the parasitic parameters in the driving circuit, excessive switching speed is easy to cause oscillation, which affects the reliability of the gate and limits the efficiency and security of SiC MOSFET. In this paper, the single transistor driving circuit of SiC MOSFET has been taken as the research object, the transient process of turn-on of SiC MOSFET has been analyzed, and the mathematical model considering the main parasitic parameters of the circuit has been established. The influence of driving circuit parameters, main circuit parasitic parameters and operating conditions on gate source voltage has been analyzed quantitatively. The differences and influencing factors of gate source voltage, test point voltage and driving voltage have been analyzed. Finally, combined with the electrical stress and comprehensive loss of SiC MOSFET, an optimized design method of driving circuit parameters has been proposed. Experimental results validate the correctness of the mathematical model and the theoretical analysis.