Abstract: Silicon carbide devices have huge advantages over silicon-based devices in terms of high voltage, high frequency, high temperature, high power, low loss, and anti-radiation. They can greatly improve the power, efficiency, volume, and weight performance indicators of power electronic systems. High-voltage power transmission and transformation, new energy vehicles, aerospace, shipbuilding and navigation have huge application prospects. Among them, the dynamic and static characteristics and high temperature reliability as the necessary parameters to characterize the performance of SiC MOSFET module is the first step that needs to be analyzed. However, at present, the test and analysis of dynamic/static parameters and high temperature reliability of power silicon carbide MOSFET are poor in the domestic. The test of dynamic and static parameters is a necessary step to screen whether the performance of power MOSFET device meets the standard, and the reliability test is to verify the extreme performance of the module in a long-term high temperature environment. These test results are an important basis for feedback optimization of device design and module packaging performance. At the same time, it has a very necessary significance for promoting the development and application of silicon carbide power MOSFET module. The purpose of this paper was based on the study of the module of the equivalent voltage level packaged with SiC chip produced by 4-inch wafer early of our project team, choosing the optimized chip produced by 6-inch SiC substrate to package into 6500V50A SiC MOSFET module. The dynamic and static characteristics and high temperature reliability were tested and analyzed. The effect of chip design, integration and packaging process were verified. The final result will provide an important reference for our project team to optimize and improve the SiC MOSFET chip design, integration and packaging process furtherly in the later stage.