Abstract: Silicon carbide（SiC） power devices have the advantages of blocking higher voltage, working at higher temperature, having lower conduction resistance, faster switching speed. How to make full use of these advantages brings new challenges to the packaging technologies: the high parasitic parameters of traditional packaging cannot meet the requirement of its fast switching; the reliabilities of SiC devices drop dramatically under high working temperature; and the packaging shows the development tendency of multi-functional integration and high power density. Facing these challenges, this paper analyzed the reason of high parasitic inductance in traditional packaging firstly, and focused on an overview of low-inductance packaging structures from home and abroad with analyses and classifications. Then, this paper compares materials and processes that can improve high-temperature reliabilities of the packaging, such as the interconnection of chips, ceramic boards and baseplates. At last, an overview of current development tendency on packaging integration was done, and all kinds of thermal dissipation methods were introduced. Based on the review, and according to the development tendency of power electronics, summary and prospect of the key technologies were proposed.