Abstract: The Si/SiC hybrid switch（HyS） concept of paralleling a main Si IGBT and an auxiliary SiC MOSFET offers an improved cost/performance tradeoff in power converters. The characteristics of the SiC MOSFET strongly affect the performance of the hybrid switch. It is necessary to analyze the characteristics of the hybrid switch based on different types of SiC MOSFETs. The HyS_J based on the junction barrier controlled Schottky rectifier integrated silicon carbide MOSFET（SiC JMOS） and the HyS_D based on the conventional SiC MOSFET were comprehensively compared and studied. The results show that the HyS_J has lower reverse conduction voltage drop, better reverse recovery performance and smaller turn-on switching losses than the HyS_D solution. A single-phase inverter loss model for hybrid devices was established, and the loss difference between these two solutions in the inverter application was compared and analyzed. A prototype of a 5 kW single-phase inverter based on two hybrid devices was built. The experimental results show that HyS_J can achieve 0.5% improvement of the peak conversion efficiency compared to the HyS_D solution under light load condition.