Abstract: Due to the immaturity of the manufacturing process of silicon carbide MOSFET chips, the static parameters of the chips are very dispersive. This leads to a large difference in switching energy when the chips are used in parallel. In high frequency applications, the mismatch of switching energy will have a significant impact on the heat distribution of the chips, and then which seriously affects the reliability of the silicon carbide MOSFET module. In this paper, the spread of static parameters of 30 single chip silicon carbide MOSFET devices was obtained by tests. An experimental platform for the tests of parallel single chip silicon carbide MOSFET dynamic characteristics and a parallel single chip silicon carbide MOSFET equivalent circuit calculation model was built. The difference of the transfer characteristic curve, on-resistance, gate internal resistance and inter-electrode capacitance of the parallel device were changed and the difference between the parallel switching energy and the turn-on transient peak current was obtained by the simulation model. On the base of calculation results, silicon carbide MOSFET chip screening strategy based on switching energy balancing was proposed. The results of the chip screening strategy were verified by experiments. The simulation and experimental results show that chip screening with transient current balance as the target could not reliably guarantee the switching energy balance in parallel connection. Based on the proposed screening strategy, making use of the compensation effect of the device parameters can balancing the switching energy.