抑制瞬态电压电流尖峰和振荡的电流注入型SiC MOSFET有源驱动方法研究
Research on Current Injection Active Drive Method of SiC MOSFET With Transient Voltage and Current Spike and Oscillation Suppression
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摘要: 为了满足电力电子系统高频、高效和高功率密度的需求,碳化硅金属氧化物半导体场效应管(silicon carbide metal oxide semiconductor field effect transistor,SiC MOSFET)越来越广泛地应用于各类电力电子变换器。其开关过程中存在瞬态电压电流尖峰和高频振荡,不仅对半导体器件的安全运行构成威胁,而且会恶化电力电子变换器的电磁兼容性。该文针对SiCMOSFET开关过程中存在的瞬态电压电流尖峰和振荡的问题,分析SiCMOSFET开关过程及瞬态电压电流尖峰和振荡产生机理,并在此基础上提出一种电流注入型有源驱动电路。该有源驱动电路通过在SiCMOSFET开通过程的电流上升阶段向栅极注入反向电流,在关断过程的电流下降阶段向栅极注入正向电流,以达到抑制开关过程瞬态电压电流尖峰和振荡的目的。实验结果表明,提出的有源驱动电路能够有效抑制SiCMOSFET开关过程瞬态电压电流的尖峰和高频振荡,从而从源头上改善了电力电子变换器的电磁兼容。Abstract: In order to meet the requirements of high frequency, high efficiency and high power density of power electronic systems, SiC MOSFETs are increasingly used in various types of power electronic converters. Transient voltage and current spikes and high-frequency oscillations occur during the switching process, which not only poses a threat to the safe operation of the semiconductor device, but also deteriorates the electromagnetic compatibility of the power electronic converter. Based on the analysis of SiC MOSFET switching process voltage and current spike and oscillation generation mechanism, a current injection type active gate driver was proposed. The active driving circuit injected a reverse current into the gate during the current rising phase of the SiC MOSFET turn-on process, and injected a forward current into the gate during the current falling phase of the turn-off process to suppress the transient voltage and current during the switching process. The experimental results show that the active driving circuit proposed in this paper can effectively suppress the spike and high-frequency oscillation of transient voltage and current during the switching process of SiC MOSFET, thus improving the electromagnetic compatibility of power electronic converter from the source.
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