Abstract: Titanium nitride（TiN）thin films with adjustable photoelectric properties were fabricated by DC magnetron sputtering. The results show that the transmittance of TiN thin film improves with the increase of deposition pressure and nitrogen concentration. The conductivity of the TiN films can be enhanced with the increasing sputtering power,and decreases when deposition pressure and nitrogen concentration increased. The average transmittance at wisible wavelength of TiN is 0%-60%. The TiN film prepared at low nitrogen concentration and deposition pressure shows excellent conductivity（4000 S/cm）. The application of high-conductivity TiN films in Tunnel Oxide Passivated Contact（TOPCon）solar cells,which improved the contact between the polycrystalline silicon（Poly-Si）layer and the silver electrode,thus increased the fill factor,providing an effective way to realize efficient TOPCon solar cells.