晶硅异质结太阳电池nc-Si:H/nc-SiOx:H叠层窗口层研究
RESEARCH ON nc-Si:H/nc-SiOx:H STACKED THIN FILMS AS SILICON HETEROJUNCTION SOLAR CELL WINDOW LAYER
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摘要: 该研究制备高电导、高透明的磷掺杂氢化纳米晶硅氧（nc-Si Ox:H）薄膜，应用于晶硅异质结（SHJ）太阳电池的窗口层以替代传统的氢化非晶硅（a-Si:H）薄膜。与以a-Si:H薄膜为窗口层的电池相比，短路电流密度提高0.5 m A/cm2，达到38.5 m A/cm2，填充因子为82.7%，光电转换效率为23.5%。实验发现，在nc-Si Ox:H薄膜沉积前对本征非晶硅层表面进行处理，沉积1 nm纳米晶硅（nc-Si:H）种子层，可改善nc-Si Ox:H薄膜的晶化率，降低薄膜中的非晶相含量。与单层nc-Si Ox:H窗口层的电池相比，nc-Si:H/nc-Si Ox:H叠层结构提高电池填充因子，达到83.4%，光电转换效率增加了0.3%，达到23.8%。Abstract: In this work,the highly conductive,highly transparent phosphorus-doped hydrogenated nanocrystalline silicon oxide（ncSi Ox:H） film is prepared,which is successfully applied as the window layer of silicon heterojunction （SHJ） cells to replace the traditional hydrogenated amorphous silicon（a-Si:H）film.Compared with the cell with a-Si:H thin film as the window layer,the shortcircuit current density can be increased by 0.5 m A/cm~2to 38.5 m A/cm~2,the fill factor is 82.7%,and the efficiency is 23.5%.In addition,the intrinsic amorphous silicon layer was surface treated before nc-Si Ox:H film deposition.The deposition of 1 nm nanocrystalline silicon seed layer can improve the crystallinity of nc-Si Ox:H film and reduce the content of amorphous phase in the film.Compared with the fill factor of the cell with nc-Si Ox:H film,the fill factor of the cell with nc-Si:H/nc-Si Ox:H stacked thin films is increased to 83.4%,and the efficiency increased by 0.3%to 23.8%.
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