杜明星, 边维国, 欧阳紫威. 考虑寄生电感的SiC MOSFET半桥电路串扰峰值预测方法[J]. 太阳能学报, 2023, 44(1): 16-23. DOI: 10.19912/j.0254-0096.tynxb.2021-0824
引用本文: 杜明星, 边维国, 欧阳紫威. 考虑寄生电感的SiC MOSFET半桥电路串扰峰值预测方法[J]. 太阳能学报, 2023, 44(1): 16-23. DOI: 10.19912/j.0254-0096.tynxb.2021-0824
Du Mingxing, Bian Weiguo, Ouyang Ziwei. CROSSTALK PEAK PREDICTION METHOD FOR HALF-BRIDGE CIRCUIT OF SiC MOSFET CONSIDERING PARASITIC INDUCTANCE[J]. Acta Energiae Solaris Sinica, 2023, 44(1): 16-23. DOI: 10.19912/j.0254-0096.tynxb.2021-0824
Citation: Du Mingxing, Bian Weiguo, Ouyang Ziwei. CROSSTALK PEAK PREDICTION METHOD FOR HALF-BRIDGE CIRCUIT OF SiC MOSFET CONSIDERING PARASITIC INDUCTANCE[J]. Acta Energiae Solaris Sinica, 2023, 44(1): 16-23. DOI: 10.19912/j.0254-0096.tynxb.2021-0824

考虑寄生电感的SiC MOSFET半桥电路串扰峰值预测方法

CROSSTALK PEAK PREDICTION METHOD FOR HALF-BRIDGE CIRCUIT OF SiC MOSFET CONSIDERING PARASITIC INDUCTANCE

  • 摘要: 针对光伏并网逆变器中的串扰问题,提出一种考虑寄生电感影响的非开尔文封装SiC MOSFET串扰峰值预测算法。以TO-247-3封装SiC MOSFET构成的半桥电路为研究对象,首先分析各个阶段的串扰电压数学模型,并推导串扰电压的微分表达式;其次提出串扰峰值的预测算法,建立预测峰值所需参数的数学模型;最后搭建实验平台,验证理论的正确性和算法的有效性,为设计光伏并网逆变器的驱动和保护电路提供参考依据。

     

    Abstract: Aiming at the crosstalk problem in photovoltaic grid-connected inverter,a crosstalk peak prediction algorithm for non-Kelvin packaged SiC MOSFET considering the effect of parasitic inductance is proposed. The half-bridge circuit composed of To-247-3 package SiC MOSFET is studied. Firstly,the mathematical model of crosstalk voltages in each stage are analyzed,and the differential expressions of crosstalk voltage are derived;Secondly,the prediction algorithm of crosstalk peak is proposed,and the mathematical models of the parameters required to predict the crosstalk peak are established;Finally,an experimental platform is built to verify the correctness of the theory and the effectiveness of the algorithm.

     

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