Abstract: Polycrystalline PERC solar cells have experienced rapid development due to their low cost and high efficiency recently.However,the employment of PERC technology may bring serious light and elevated temperature induced degradation（LeTID）for polycrystalline silicon cells. To conquer this problem,we designed different annealing conditions, systematically characterized the photoelectric properties of life test silicon wafers and solar cells, and studied the effects of different photothermal annealing methods on improving the LeTID of polycrystalline perc cells. The obtained results demonstrate that the LeTID extent is highly related with the photothermal annealing conditions. The optimum photothermal annealing condition can effectively inhibit the LeTID of polycrystalline PERC solar cells without decreasing the cell efficiency. Our study may provide a new method for inhibiting the LeTID problem of polycrystalline PERC solar cells.