氢注入在硅异质结太阳电池a-Si:H窗口层中的研究
INVESTIGATION OF ATOMIC-HYDROGEN INJECTION IN a-Si:H WINDOW LAYERS OF SILICON HETEROJUNCTION SOLAR CELLS
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摘要: 基于热丝化学气相沉积(Cat-CVD)系统开展氢注入对超薄(<10 nm)氢化非晶硅(a-Si:H)薄膜特性改善的研究,发现适当的氢注入可提高薄膜内的氢含量、降低其微结构因子并展宽其光学带隙。将该方法用于处理硅异质结(SHJ)太阳电池入光侧的本征非晶硅(i-a-Si:H)及N型非晶硅(n-a-Si:H)薄膜钝化层,可显著提升晶体硅的表面钝化质量。通过使用AFORSHET软件模拟SHJ太阳电池入光面的界面缺陷及n-a-Si:H体缺陷对电池性能的影响,分析得到:将氢注入用于处理a-Si:H窗口层,SHJ太阳电池性能的提升源于电池入光侧界面及a-Si:H体材料的结构改善。电池的开路电压(Voc,728.4~736.1 mV)、短路电流密度(Jsc,37.99~38.20 mA/cm2)、填充因子(FF,79.67%~81.07%)及转换效率(Eff,22.04%~22.79%)均得到明显提升。Abstract: In this study,the effect of hydrogen injection on ultrathin(<10 nm)hydrogenated amorphous silicon(a-Si:H)films by catalytic chemical vapor deposition(Cat-CVD)system is investigated. By applying a proper hydrogen injection process,the hydrogen contents is increased in the a-Si:H film. Simultaneously,the optical bandgaps are broadened is enhanced acwmpanied with microstructural factors being reduced. When the process is applied to i-or n-a-Si:H window layers of n-type rear-emitter SHJ solar cells,passivation qualities are improved apparently. The numerical analysis by AFORS-HET further demonstrates that the improved performance of solar cells originates from the reduced defect densities at the front i-a-Si:H/c-Si interface as well as in the n-a-Si:H bulk.As a consequence of the improved interface quality and a-Si:H bulk properties at the front side,the characteristics of SHJ solar cells is enhanced significantly(Vocfrom 728.4 to 736.1 mV,Jscfrom 37.99 to 38.20 mA/cm~2,FF from 79.67% to 81.07% and Eff from22.04% to 22.79%).