Abstract: Serious recombination effects would be enforced in the process of electrode collection of carriers due to deep-level defects act as recombination centers in solar cells,resulting in a significant reduction of short-circuit current,which directly affects the performance of photovoltaic products. Therefore,the existence of deep-level defects must be strictly detected in the production process of solar cells. However,based on the limitations of conventional characterization methods,the solar cells with GR noise and 1/f noise was firstly studied by means of nondestructive noise detection,and then the electrical performance of GR noise and 1/f noise solar cells were compared. The analysis showed that the electrical performance of GR noise solar cells is significantly weaker than that of 1/f noise.Finally,the solar cells with GR noise was tested under different voltages. According to the relationship between GR noise turning frequency and voltage is extracted to show that GR noise source is sensitive to voltage. At the same time,the conclusion that GR noise source is located in depletion layer is confirmed by combining with PIN junction structure of amorphous silicon cell.