Abstract: The effect of shaped laser on selective doping for silicon passivated emitter localized back contact solar cells（PERC） was studied by having the laser power and laser scribing speed.By taking the advantages of uniform energy distribution and small damage to the silicon wafer,shaped laser is widely applied for preparation of selective emitter in PERC cells.In this work,the effect of shaped laser with various power and scribing speed is investigated on the preparation of selective emitters in p-type single crystal silicon based PERC solar cells.The surface morphology,sheet resistance,doping concentration and electrical properties of the samples are characterized by scanning electron microscopy,four-probe sheet resistance tester and electrochemical capacitance method,respectively.It is promoted in this paper that different laser power and laser scribing speed are converted into laser energy density by the combination of the laser spot overlapping ratio.By taking the initial doping concentration into consideration,it is found that the optimal laser energy density for the selective emitter is 0.97 J/cm~2,in corresponding to the laser power of 28 W and the laser scribing speed of 24 m/s for the laser equipment used in this study.Such laser conditions are applied in the production line,the conversion efficiency of silicon PERC solar cell can be stably increased by over 0.25 %.