Abstract: The Cerium-doped indium oxide films are grown at room temperature by reactive plasma deposition（RPD）,hydrogen is introduced during the deposition process. High mobility enables transparent conductive films to maintain higher near infrared transmittance at lower resistivity. The lower carrier concentration in transparent conductive films can reduce the absorption of free carriers. The mobility is mainly determined by the scattering mechanism in the films and is restricted by the amorphous structure of the films. The ICO∶H films have smooth surface and its transmittance is over 80% in the near-infrared long wavelength range. When hydrogen flow rate is 2 sccm,the film presents the lowest resistivity of 1.34 × 10^-3Ω · cm and high mobility of 94 cm~2/Vs. In the application of crystalline silicon heterojunction（SHJ）solar cells,a higher short-circuit current of 38.44 mA/cm~2 is obtained and the corresponding conversion efficiency is 16.68%.