Abstract: This paper investigates the effects of oxygen content,sputtering power,deposition temperature,and sputtering pressure on the photoelectric properties of ITO thin films prepared on glass substrates by DC magnetron sputtering. The research results show that:1) The photoelectric properties of ITO thin films are more sensitive to oxygen content. As the oxygen content increases,the resistivity of ITO thin films also increases,while the transmittance shows a trend of first increasing and then decreasing,and then remaining basically unchanged. 2) As the deposition temperature increases,the transmittance of ITO thin films also increases,while the resistivity shows a trend of first decreasing and then increasing. 3) As the sputtering pressure increases,the resistivity of ITO thin films shows an upward trend,while the transmittance first decreases and then slightly increases. 4) When the oxygen content is between 1.8%～2.0%,the sputtering power is between 3000～4000W,the deposition temperature is between 150～190 ℃,and the sputtering pressure is between 0.5～0.7 Pa,ITO thin films have better optoelectronic properties. Therefore,increasing the deposition temperature within a reasonable range will have an annealing effect,which helps to further improve the photoelectric properties of ITO films.