王成信. 太阳能级硅片清洗液原料配比研究[J]. 太阳能, 2023, (6): 31-35. DOI: 10.19911/j.1003-0417.tyn20220411.01
引用本文: 王成信. 太阳能级硅片清洗液原料配比研究[J]. 太阳能, 2023, (6): 31-35. DOI: 10.19911/j.1003-0417.tyn20220411.01
Wang Chengxin. RESEARCH ON RAW MATERIAL RATIO OF SOLAR GRADE SILICON WAFER CLEANING SOLUTION[J]. Solar Energy, 2023, (6): 31-35. DOI: 10.19911/j.1003-0417.tyn20220411.01
Citation: Wang Chengxin. RESEARCH ON RAW MATERIAL RATIO OF SOLAR GRADE SILICON WAFER CLEANING SOLUTION[J]. Solar Energy, 2023, (6): 31-35. DOI: 10.19911/j.1003-0417.tyn20220411.01

太阳能级硅片清洗液原料配比研究

RESEARCH ON RAW MATERIAL RATIO OF SOLAR GRADE SILICON WAFER CLEANING SOLUTION

  • 摘要: 太阳能级硅片在金刚线切割和打磨过程中会受到严重污染,需要采用物理或化学方法去除其表面的污染物,以满足硅片制绒前对洁净度和表面状态的要求。为了减少对硅片的过度腐蚀并保持清洗液的持久性,通过正交试验法进行实验,确定硅片清洗液中表面活性剂成分的最佳配比。结果显示:1)表面活性剂最佳配比为环氧丙烷(PO)嵌段的脂肪酸甲酯乙氧基化物(FMEE):无磷乙二胺二邻苯基乙酸钠(EDDHA-Na):FMEE的磺酸盐(FMES):伯烷基磺酸钠(PAS):烷基糖苷(APG)=7:8:3:5:4;2)按照最佳配比配置的硅片清洗液无磷、环保,且清洗性能持续时间久,应用于实际的硅片清洗工艺后硅片的不良率小于0.5%,符合工厂实际生产要求。

     

    Abstract: Solar grade silicon wafers can be severely contaminated during diamond wire cutting and polishing processes,and physical or chemical methods need to be used to remove surface pollutants to meet the requirements for cleanliness and surface condition before velvet production of silicon wafers. In order to reduce excessive corrosion of silicon wafers and maintain the durability of the cleaning solution,this paper conducts experiments using orthogonal test method to determine the optimal ratio of surfactant components in the silicon wafers cleaning solution. The results show that: 1) The optimal ratio of surfactant components is FMEE: EDDHANa:FMES:PAS: APG=7:8:3:5:4;2) The silicon wafer cleaning solution configured according to the optimal ratio is phosphorus free,environmentally friendly,and has a long cleaning performance. After being applied to the actual silicon wafer cleaning process,the defect rate of the silicon wafer is less than 0.5%,which meets the actual production requirements of the factory.

     

/

返回文章
返回