庄池杰, 石清元, 林波, 彭晞雨, 吴丹, 刘志成, 李立, 施连军, 任李鑫, 纪瑞朗, 余占清, 吴锦鹏, 魏晓光, 曾嵘. 自主可控的功率半导体器件仿真工具研发进展(一):二维计算的精度[J]. 高电压技术, 2025, 51(1): 21-30. DOI: 10.13336/j.1003-6520.hve.20242023
引用本文: 庄池杰, 石清元, 林波, 彭晞雨, 吴丹, 刘志成, 李立, 施连军, 任李鑫, 纪瑞朗, 余占清, 吴锦鹏, 魏晓光, 曾嵘. 自主可控的功率半导体器件仿真工具研发进展(一):二维计算的精度[J]. 高电压技术, 2025, 51(1): 21-30. DOI: 10.13336/j.1003-6520.hve.20242023
ZHUANG Chijie, SHI Qingyuan, LIN Bo, PENG Xiyu, WU Dan, LIU Zhicheng, LI Li, SHI Lianjun, REN Lixing, JI Ruilang, YU Zhanqing, WU Jinpeng, WEI Xiaoguang, ZENG Rong. Progress of Power Semiconductor Device Simulation Tool Development Part I: Accuracy of Two-dimensional Calculations[J]. High Voltage Engineering, 2025, 51(1): 21-30. DOI: 10.13336/j.1003-6520.hve.20242023
Citation: ZHUANG Chijie, SHI Qingyuan, LIN Bo, PENG Xiyu, WU Dan, LIU Zhicheng, LI Li, SHI Lianjun, REN Lixing, JI Ruilang, YU Zhanqing, WU Jinpeng, WEI Xiaoguang, ZENG Rong. Progress of Power Semiconductor Device Simulation Tool Development Part I: Accuracy of Two-dimensional Calculations[J]. High Voltage Engineering, 2025, 51(1): 21-30. DOI: 10.13336/j.1003-6520.hve.20242023

自主可控的功率半导体器件仿真工具研发进展(一):二维计算的精度

Progress of Power Semiconductor Device Simulation Tool Development Part I: Accuracy of Two-dimensional Calculations

  • 摘要: 功率半导体器件是电力电子装备电流开断和电能转换的核心。作为全球最大的功率半导体消费国,中国功率器件自给率低,严重依赖进口,亟需自主化突破。功率半导体器件仿真软件作为器件多物理场分析、设计优化的必备工具,研发难度大、周期长、见效慢。国内使用的功率半导体TCAD软件几乎全部由Synopsys、Silvaco等国外公司垄断。作为国产替代的第一步,自2019年以来,团队按照“先追赶、再并跑、最后超越”的思路,开展功率半导体器件国产仿真工具的研发工作。该文在分析功率器件物理模型、求解难点的基础上,介绍了自主可控的功率半导体器件二维仿真工具的初步研发进展,与垄断商业软件Synopsys TCAD Sentaurus Device计算结果开展了详细比对,在测试的算例和物理模型上,自研软件二维计算的精度向国际垄断商业软件看齐。

     

    Abstract: Power semiconductor devices are the core of electrical energy conversion in power electronic equipment. As the world's largest consumer of power semiconductors, China faces a low self-sufficiency rate and a heavy reliance on imports, highlighting an urgent need for breakthroughs. Power semiconductor device simulation software, as an essential tool for multi-physics analysis and design optimization of devices, presents significant challenges in terms of high development complexity and low return on investment. Currently, almost all power semiconductor TCAD tools in use are developed by foreign companies such as Synopsys and Silvaco. Since 2019, the team has carried out the research and development work of power semiconductor device simulation tools. Based on the analysis of the physical models and solution difficulties of power semiconductor devices, this paper focuses on introducing the preliminary research progress of the two-dimensional simulation tool for power semiconductor devices, and conducts a detailed comparison with the calculation results of the world-leading commercial software Synopsys TCAD Sentaurus Device to verify the accuracy of the two-dimensional calculations.

     

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