彭向阳, 姚驰, 余欣, 胡世勋, 范亚洲, 何金良. 硅烷接枝聚丙烯的直流电性能与陷阱机制[J]. 高电压技术, 2023, 49(11): 4480-4489. DOI: 10.13336/j.1003-6520.hve.20231488
引用本文: 彭向阳, 姚驰, 余欣, 胡世勋, 范亚洲, 何金良. 硅烷接枝聚丙烯的直流电性能与陷阱机制[J]. 高电压技术, 2023, 49(11): 4480-4489. DOI: 10.13336/j.1003-6520.hve.20231488
PENG Xiangyang, YAO Chi, YU Xin, HU Shixun, FAN Yazhou, HE Jinliang. DC Electrical Properties and Trap Mechanism of Silane-grafted Polypropylene[J]. High Voltage Engineering, 2023, 49(11): 4480-4489. DOI: 10.13336/j.1003-6520.hve.20231488
Citation: PENG Xiangyang, YAO Chi, YU Xin, HU Shixun, FAN Yazhou, HE Jinliang. DC Electrical Properties and Trap Mechanism of Silane-grafted Polypropylene[J]. High Voltage Engineering, 2023, 49(11): 4480-4489. DOI: 10.13336/j.1003-6520.hve.20231488

硅烷接枝聚丙烯的直流电性能与陷阱机制

DC Electrical Properties and Trap Mechanism of Silane-grafted Polypropylene

  • 摘要: 为研究接枝改性聚丙烯(polypropylene, PP)作为可回收直流电缆绝缘的电气性能及其调控机理,制备了乙烯基三乙氧基硅烷(vinyltriethoxysilane, VTES)接枝改性的聚丙烯,并重点对其常温和高温下的击穿场强、体积电阻率和相关的陷阱特性与机制进行了测试与分析。实验研究表明:接枝硅烷后的聚丙烯在30 ℃和90 ℃两种温度以及电缆绝缘层工作场强的条件下,其电阻率最高提升2~3倍,击穿场强提升接近10%,空间电荷被显著抑制;接枝硅烷可以在材料中引入大量深陷阱。仿真分析表明,接枝硅烷能够在材料中引入较深的电子陷阱能级和较深的静电势阱。陷阱和势阱可以捕获自由载流子,影响电荷输运过程,从而实现电阻率的提升。该文工作可为后续接枝改性聚丙烯直流电缆绝缘材料研究与开发提供参考。

     

    Abstract: In order to study the electrical properties of grafted polypropylene (PP) which can be used as recyclable DC cable insulation and its regulation mechanism, the polypropylene grafted by vinyltriethoxysilane (VTES) was prepared. The breakdown strength, DC resistivity under room and high temperatures, and the related trap characteristics and mechanism were tested and analyzed. The experimental results show that, for the silane-grafted PP, the electrical resistivity is enhanced by 2~3 times at most under the working electric field of the cable insulation layer, and under the two temperature conditions of 30 ℃ and 90 ℃. The breakdown strength can be enhanced by nearly 10% compared with pure PP, and the space charge accumulation is significantly suppressed. Grafted silane can introduce a large number of deep traps into the material. The simulation results show that grafted silane can introduce deep electron trap levels and deep electrostatic potential wells into the material. Traps and potential wells can capture free carriers and affect the charge transport process, thus achieving an increase in resistivity. The work in this paper can provide some references for the subsequent research and development of grafted polypropylene DC cable insulation materials.

     

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