刘宇舜, 陈奕凯, 余嘉川, 牛雷, 王浩舟, 任成燕. 等离子体改性提高染污硅橡胶绝缘沿面性能[J]. 高电压技术, 2024, 50(3): 1301-1310. DOI: 10.13336/j.1003-6520.hve.20230251
引用本文: 刘宇舜, 陈奕凯, 余嘉川, 牛雷, 王浩舟, 任成燕. 等离子体改性提高染污硅橡胶绝缘沿面性能[J]. 高电压技术, 2024, 50(3): 1301-1310. DOI: 10.13336/j.1003-6520.hve.20230251
LIU Yushun, CHEN Yikai, YU Jiachuan, NIU Lei, WANG Haozhou, REN Chengyan. Plasma Modification to Improve the Surface Insulation Performance of Contaminated Silicone Rubber[J]. High Voltage Engineering, 2024, 50(3): 1301-1310. DOI: 10.13336/j.1003-6520.hve.20230251
Citation: LIU Yushun, CHEN Yikai, YU Jiachuan, NIU Lei, WANG Haozhou, REN Chengyan. Plasma Modification to Improve the Surface Insulation Performance of Contaminated Silicone Rubber[J]. High Voltage Engineering, 2024, 50(3): 1301-1310. DOI: 10.13336/j.1003-6520.hve.20230251

等离子体改性提高染污硅橡胶绝缘沿面性能

Plasma Modification to Improve the Surface Insulation Performance of Contaminated Silicone Rubber

  • 摘要: 表面积污后电荷消散速率减慢与憎水性丧失是降低硅橡胶(SIR)复合绝缘子沿面绝缘性能的重要因素。文中采用常压脉冲滑动弧等离子体发生装置,对人工涂污高温硫化(HTV)硅橡胶进行不同时间(0~3 min)的表面改性。利用表面电位测量系统和傅里叶变换红外光谱仪(FTIR)研究等离子体处理对染污硅橡胶试样表面电荷运动特性、憎水性及化学成分的影响,测试处理前后染污试样的表面介电性能。研究结果表明:不同时间下的等离子体处理均可加快试样表面电荷消散速率,处理过程中引入大量浅陷阱,陷阱能级深度和陷阱电荷密度均下降,减弱了试样表面捕获电子的能力,抑制电荷积聚;试样体积电阻率几乎不受等离子体处理影响,但表面电阻率的减小使电荷更易沿试样表面运动消散;等离子体处理后,试样干燥和湿润条件下的沿面耐压均获得提升。等离子体处理使试样在短时间内恢复憎水性,处理时间越长,憎水性改善越明显;等离子体处理后更多的硅氧烷小分子迁移至污层表面使憎水性提高。

     

    Abstract: The slowdown of charge dissipation rate and loss of hydrophobicity after surface contamination are important factors to reduce the insulation performance of silicone rubber (SIR) composite insulators along the surface. In this paper, a normal pressure pulse sliding arc plasma generator was used to modify the surface of artificially polluted high-temperature vulcanized (HTV) silicone rubber at different time (0~3 min). The surface potential measurement system and Fourier transform infrared spectrometer (FTIR) were used to study the effects of plasma treatment on the surface charge motion characteristics, hydrophobicity and chemical composition of contaminated silicone rubber samples, and the surface dielectric properties of contaminated samples before and after treatment were tested. The results show that plasma treatment at different times can accelerate the rate of charge dissipation on the surface of the sample, introduce a large number of shallow traps during the treatment, and decrease the trap energy level depth and trap charge density, which weakens the ability of the sample surface to capture electrons and inhibits charge accumulation. The volume resistivity of the sample is hardly affected by plasma treatment, whereas the decrease of surface resistivity makes it easier for the charge to dissipate along the surface of the sample. After plasma treatment, the surface flashover voltage of the sample is increased under both dry and wet conditions. Plasma treatment restores the hydrophobicity of the samples in a short period of time, and the longer the treatment time, the more obvious the improvement of hydrophobicity; after plasma treatment, more small siloxane molecules migrate to the surface of the dirt layer, making it more hydrophobic.

     

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