Abstract: With the increasing of energy consumption and power demand in the world, flexible DC transmission technology has been developed rapidly. As the key equipment of DC transmission technology, insulated gate bipolar transistor (IGBT) has the advantages of energy saving, high frequency, easy installation, stable heat dissipation, and so on. With the development of DC transmission technology, IGBT power electronic equipment continues to develop towards the direction of high voltage and high power. The heat generated by IGBT and the operating temperature gradually increase, thus the failure of its insulation and sealing system becomes increasingly prominent. Therefore, it is of great significance to find a kind of insulating potting material with high temperature resistance for the development of high voltage and high power IGBT and other electrical equipment. Starting with analyzing the packaging structure of IGBT, this paper summarizes and analyzes the failure mechanism of IGBT under different influencing factors, and describes the current research progress of modified silicone potting materials with high temperature resistance in view of the packaging failure under high temperature action. At the same time, its application field is summarized, hoping to provide certain ideas for the research and development of novel high-temperature-resistance silicone potting materials.