Abstract: Silicone elastomer, as a kind of high molecular polymer, has been applied in SiC power module because of its fine high-temperature resistance, insulation strength and internal compatibility with chips. At present, the studies on the insulation properties of silicone elastomers at high temperature are rarely available in the literature, and the trap characteristics of the dielectric are closely related to its insulation properties. Therefore, it is of great significance to study the trap characteristics of silicone elastomer and its temperature-dependence for the application of this kind of encapsulant in SiC device packaging. In this paper, the surface potential decay (SPD) method is used to measure the surface potential decay curve of silicone elastomer in the temperature range of 20~250 ℃. The microscopic parameters such as trap energy level, trapped charge density, and mobility of silicone elastomer at different temperatures are extracted, and the fitting expressions of silicone elastomer mobility and potential decay time constant with temperature are established. The influence mechanism of temperature on the trap characteristics of silicone elastomer is analyzed, and the temperature threshold for the maximum quantity of trapped charges in silicone elastomer is determined. In addition, combined with the trap characteristics of silicone elastomer, the patterns of the conductivity, mobility and the potential decay time constant difference between deep and shallow trap of the material changing with temperature are explained from the perspective of carrier transport. The polarity effect of the trap characteristics of silicone elastomer is explained through its microstructure. The relevant results can provide support for the cognition of the insulation characteristics of silicone elastomer at different temperatures.