Abstract: Due to the inherent high interfacial state density of SiC/SiO₂ interface, threshold voltage hysteresis always affects the reliability of SiC MOSFET. In order to quantitatively evaluate the effect of threshold voltage hysteresis on the switching characteristics of SiC MOSFET, firstly, a switching transient model with non-ideal mutation of driving voltage was established by considering the rise and fall time of driving voltage. Secondly, according to the IEC standard, the analytic expressions of switching delay time and switching loss were obtained. Moreover, the dynamic characteristics under different driving negative voltage were tested and the switching delay and switching loss were extracted. Finally, through the combination of experimental results and analytical model, the influence of driving negative voltage and threshold voltage hysteresis on switching characteristics was decoupled and quantified, and the relationship between driving negative voltage and threshold voltage under the influence of threshold voltage hysteresis was obtained. The results show that both the driving negative voltage and threshold voltage hysteresis can reduce the turn-on delay time, whereas, the threshold voltage hysteresis has a greater effect on it than the driving negative voltage. The driving negative voltage has no effect on turn-on loss, whereas, the threshold voltage hysteresis will lead to the reduction of turn-on loss.