Abstract:
CF
3SO
2F is a new environmentally friendly insulating gas with a potential to replace insulating gas SF
6. Considering the biological toxicity of CF
3SO
2F, it is of great engineering importance to develop a highly sensitive sensor for leak detection. Based on the first-principles calculation, this paper analyzes the gas sensing response characteristics of
β-Ga
2O
3 (010) surface in the presence and absence of oxygen vacancy as a gas sensing material to CF
3SO
2F. The work function of the pristine
β-Ga
2O
3 (010) surface system is changed significantly with and without CF
3SO
2F adsorption, and the recovery time at room temperature is short. Moreover, the presence of environmental molecules O
2 and CO
2 does not affect the selective detection of CF
3SO
2F on the pristine
β-Ga
2O
3 (010) surface. Therefore, the pristine
β-Ga
2O
3 (010) surface can be used as a potential field-effect transistor type gas sensing device material for CF
3SO
2F with high stability, good selectivity, high sensitivity, and reusability. The introduction of oxygen vacancy defect makes the
β-Ga
2O
3 (010) surface adsorption system unable to provide effective selectivity to detect CF
3SO
2F in the presence of environmental molecular O
2 and CO
2. Therefore, oxygen vacancy defects should be avoided as much as possible during the synthesis of
β-Ga
2O
3 (010) surface materials. This paper proves that pristine
β-Ga
2O
3 (010) surface can be used as a potential CF
3SO
2F field-effect transistor gas sensor in theory, which can guide the subsequent experimental preparation of gas sensors.