韩蓉, 郭宇铮, 高克利, 周文俊, 郑宇. β-Ga2O3 (010)表面对新型环保绝缘气体CF3SO2F的气敏响应特性[J]. 高电压技术, 2023, 49(3): 990-999. DOI: 10.13336/j.1003-6520.hve.20220846
引用本文: 韩蓉, 郭宇铮, 高克利, 周文俊, 郑宇. β-Ga2O3 (010)表面对新型环保绝缘气体CF3SO2F的气敏响应特性[J]. 高电压技术, 2023, 49(3): 990-999. DOI: 10.13336/j.1003-6520.hve.20220846
HAN Rong, GUO Yuzheng, GAO Keli, ZHOU Wenjun, ZHENG Yu. Gas Sensing Response Characteristics of New Environmentally Friendly Insulating Gas CF3SO2F on β-Ga2O3 (010) Surface[J]. High Voltage Engineering, 2023, 49(3): 990-999. DOI: 10.13336/j.1003-6520.hve.20220846
Citation: HAN Rong, GUO Yuzheng, GAO Keli, ZHOU Wenjun, ZHENG Yu. Gas Sensing Response Characteristics of New Environmentally Friendly Insulating Gas CF3SO2F on β-Ga2O3 (010) Surface[J]. High Voltage Engineering, 2023, 49(3): 990-999. DOI: 10.13336/j.1003-6520.hve.20220846

β-Ga2O3 (010)表面对新型环保绝缘气体CF3SO2F的气敏响应特性

Gas Sensing Response Characteristics of New Environmentally Friendly Insulating Gas CF3SO2F on β-Ga2O3 (010) Surface

  • 摘要: CF3SO2F作为一种新型的环保绝缘气体,有望取代绝缘气体SF6。考虑到CF3SO2F的生物毒性,开发用于泄漏检测的高灵敏度传感器具有重要的工程意义。为此,基于第一性原理,计算分析了本征β-Ga2O3 (010)表面对CF3SO2F的气敏响应特性以及氧空位缺陷对CF3SO2F在β-Ga2O3 (010)表面吸附性质的影响。CF3SO2F吸附前后,本征β-Ga2O3 (010)表面吸附体系的功函数发生了显著变化,且室温下的恢复时间短。此外,环境分子O2和CO2的存在并不影响本征β-Ga2O3 (010)表面对CF3SO2F的选择性检测。因此,本征β-Ga2O3 (010)表面可作为CF3SO2F潜在的场效应晶体管型气敏器件材料,且该器件具有较高的稳定性,良好的选择性,较高的灵敏度和可重复利用性。氧空位缺陷的引入使β-Ga2O3 (010)表面吸附体系在环境分子O2和CO2存在的情况下无法对CF3SO2F气体进行选择性检测。因此,在β-Ga2O3 (010)表面材料的合成过程中应尽可能避免氧空位缺陷的存在。论文从理论上证明了本征β-Ga2O3 (010)表面可作为一种潜在的CF3SO2F场效应晶体管型气敏材料,对后续的实验制备气敏传感器具有指导作用。

     

    Abstract: CF3SO2F is a new environmentally friendly insulating gas with a potential to replace insulating gas SF6. Considering the biological toxicity of CF3SO2F, it is of great engineering importance to develop a highly sensitive sensor for leak detection. Based on the first-principles calculation, this paper analyzes the gas sensing response characteristics of β-Ga2O3 (010) surface in the presence and absence of oxygen vacancy as a gas sensing material to CF3SO2F. The work function of the pristine β-Ga2O3 (010) surface system is changed significantly with and without CF3SO2F adsorption, and the recovery time at room temperature is short. Moreover, the presence of environmental molecules O2 and CO2 does not affect the selective detection of CF3SO2F on the pristine β-Ga2O3 (010) surface. Therefore, the pristine β-Ga2O3 (010) surface can be used as a potential field-effect transistor type gas sensing device material for CF3SO2F with high stability, good selectivity, high sensitivity, and reusability. The introduction of oxygen vacancy defect makes the β-Ga2O3 (010) surface adsorption system unable to provide effective selectivity to detect CF3SO2F in the presence of environmental molecular O2 and CO2. Therefore, oxygen vacancy defects should be avoided as much as possible during the synthesis of β-Ga2O3 (010) surface materials. This paper proves that pristine β-Ga2O3 (010) surface can be used as a potential CF3SO2F field-effect transistor gas sensor in theory, which can guide the subsequent experimental preparation of gas sensors.

     

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