王健, 刘人郢, 肖若凡, 刘继奎, 黄旭炜, 李庆民. 金属屏蔽设置对极端电子辐射下滑环绝缘构件深层充电影响因素分析[J]. 高电压技术, 2023, 49(2): 505-514. DOI: 10.13336/j.1003-6520.hve.20220155
引用本文: 王健, 刘人郢, 肖若凡, 刘继奎, 黄旭炜, 李庆民. 金属屏蔽设置对极端电子辐射下滑环绝缘构件深层充电影响因素分析[J]. 高电压技术, 2023, 49(2): 505-514. DOI: 10.13336/j.1003-6520.hve.20220155
WANG Jian, LIU Renying, XIAO Ruofan, LIU Jikui, HUANG Xuwei, LI Qingmin. Analysis of Metal Shield Setting Influence Factors on Deep Dielectric Charging of Slip Ring Insulating Components Under Extreme Electron Radiation[J]. High Voltage Engineering, 2023, 49(2): 505-514. DOI: 10.13336/j.1003-6520.hve.20220155
Citation: WANG Jian, LIU Renying, XIAO Ruofan, LIU Jikui, HUANG Xuwei, LI Qingmin. Analysis of Metal Shield Setting Influence Factors on Deep Dielectric Charging of Slip Ring Insulating Components Under Extreme Electron Radiation[J]. High Voltage Engineering, 2023, 49(2): 505-514. DOI: 10.13336/j.1003-6520.hve.20220155

金属屏蔽设置对极端电子辐射下滑环绝缘构件深层充电影响因素分析

Analysis of Metal Shield Setting Influence Factors on Deep Dielectric Charging of Slip Ring Insulating Components Under Extreme Electron Radiation

  • 摘要: 在太空极端电子辐射环境中,高能电子穿透金属屏蔽会引发滑环绝缘构件的深层充放电现象从而诱发功率传输部件(solar array drive assembly,SADA)的绝缘故障,甚至导致整星的失效。屏蔽外壳的材料、结构及配置方案等会对滑环绝缘构件的深层充电产生直接影响,因此有必要深入研究外壳的屏蔽作用并提升其防护效用,从而降低放电事故的可能性。为此建立三维滑环绝缘构件深层充电模型,得到了滑环绝缘构件电场和电势的三维分布。研究了金属屏蔽材料、屏蔽结构以及双层屏蔽对电子辐照下滑环绝缘构件最大电场的影响。结果表明,相同面密度下高原子序数金属材料比低原子序数金属材料能更好地屏蔽高能电子,但高原子序数金属材料因韧致辐射具有更高的光子透射率,容易对绝缘材料造成损伤;局部加强的屏蔽结构在质量一定的情况下能进一步降低滑环绝缘构件内部的电场畸变,在1 mm铝屏蔽质量的基础上,最大降低程度约25%;采用双层金属屏蔽时,高原子序数的金属材料在滑环绝缘构件内侧更有利于高能电子的屏蔽, 其原因在于低原子序数金属材料在最外侧时会先降低高能电子的能量,从而更好利用高原子序数金属材料具有高背散射系数的特点。

     

    Abstract: In the extreme electron radiation environment of space, the penetration of high-energy electrons through the metal shield will lead to the deep dielectric charging of slip ring insulating components, which will induce the insulation failure of the Solar Array Drive Assembly (SADA), and even lead to the failure of the whole satellite. The material, structure and configuration scheme of the shielding shell will have a direct impact on the deep dielectric charging of the slip ring insulating components. Therefore, it is necessary to deeply study the shielding effect of the shell and improve its protective effect, so as to reduce the possibility of discharge accidents. In this paper, a 3-D deep charging model of slip ring insulating components is established and the 3-D distribution of electric field and potential of slip ring insulating components is obtained. The effects of metal shielding material, shielding structure, and double-layer shielding on the maximum electric field of slip ring insulating components under electron irradiation are studied. The results show that, under the same area density, high atomic number metal materials can better shield high-energy electrons than low atomic number, but high atomic number metal materials have higher photon transmittance due to bremsstrahlung radiation and are likely to cause damage to insulating materials. The locally strengthened shielding structure can further reduce the electric field distortion in the slip ring insulating components under certain quality. On the basis of 1 mm aluminum shielding quality, the maximum reduction is about 25%. When using double-layer metal shielding, the metal materials with high atomic number inside the slip ring insulating components is more conducive to the shielding of high-energy electrons. The reason is that when the low atomic number metal material is on the outermost side, the energy of high-energy electrons will first be reduced, so as to make better use of the characteristics of high atomic number metal materials with high backscattering coefficient.

     

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