杨国清, 戚相成, 高青青, 王德意. 等离子体氟化协同偶联剂改性纳米SiO2/环氧树脂电气性能[J]. 高电压技术, 2022, 48(2): 689-697. DOI: 10.13336/j.1003-6520.hve.20210015
引用本文: 杨国清, 戚相成, 高青青, 王德意. 等离子体氟化协同偶联剂改性纳米SiO2/环氧树脂电气性能[J]. 高电压技术, 2022, 48(2): 689-697. DOI: 10.13336/j.1003-6520.hve.20210015
YANG Guoqing, QI Xiangcheng, GAO Qingqing, WANG Deyi. Electrical Properties of Nanosilica/Epoxy Resin Modified by Cooperation of Plasma Fluorination and Coupling Agent[J]. High Voltage Engineering, 2022, 48(2): 689-697. DOI: 10.13336/j.1003-6520.hve.20210015
Citation: YANG Guoqing, QI Xiangcheng, GAO Qingqing, WANG Deyi. Electrical Properties of Nanosilica/Epoxy Resin Modified by Cooperation of Plasma Fluorination and Coupling Agent[J]. High Voltage Engineering, 2022, 48(2): 689-697. DOI: 10.13336/j.1003-6520.hve.20210015

等离子体氟化协同偶联剂改性纳米SiO2/环氧树脂电气性能

Electrical Properties of Nanosilica/Epoxy Resin Modified by Cooperation of Plasma Fluorination and Coupling Agent

  • 摘要: 纳米SiO2填料与环氧树脂基体界面效应差,限制了复合材料电气性能提升。为此采用CF4/N2等离子体协同偶联剂改性纳米SiO2填料,改变其在基体中界面特性,制备了不同质量分数的纳米SiO2/环氧树脂复合材料。对复合材料的化学组分、表面形貌、闪络电压和击穿场强等进行测试。测试表明:氟元素以CF2为主要形式存在改性SiO2表面;纳米SiO2平均粒径降低27.9%,团聚现象得到有效抑制。SiO2质量分数3%的复合材料闪络电压比纯环氧树脂增高了10.58%;击穿场强达到33.7 kV/mm,体积电阻率达到2.5×1015 Ω·cm,分别比未改性试样提高11.6%和34.61%。等离子体氟化可有效在颗粒表面接枝氟元素,阻碍材料内部载流子迁移,改善复合材料电气性能。

     

    Abstract: The weak interaction in the interface layer between nanosilica and epoxy resin limits the improvement of the electrical performances for the composite. Consequently, the CF4/N2 plasma cooperated with coupling agent was adopted to modify nano-SiO2 filler and to change the interfacial characteristics of composites, and nanosilica/epoxy resin composites with different mass fractions were prepared. The chemical compositions, surface morphology, flashover voltage and breakdown field strengths of the composites were tested. The experimental results indicate that the main existing mode of the fluorine element is CF2 functional group. After plasma fluorination, the averge particle size of nanofillers is reduced by 27.9%, and the agglomeration of the nanosilica is effectively inhibited. Compared with pure epoxy resin, the flashover voltage for the composite with 3% fluorinated SiO2 is increased by 10.58%. The maximum breakdown field strength and the volume resistivity of the fluorination modified nanosilica/epoxy resin are 33.7 kV/mm and 2.5×1015 Ω·cm, respectively, which are higher than those of unmodified sample by 11.6% and 34.61%. Plasma processing can introduce the fluorine element on the surface of SiO2 particles. The migration inside the composites is inhibited and the electrical properties of the composite are improved significantly.

     

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