基于栅极电流的多芯片IGBT模块芯片支路失效监测方法

杜明星; 乔浩天; 杨建雄; 尹金良

doi:doi:10.19912/j.0254-0096.tynxb.2025-0968

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基于栅极电流的多芯片IGBT模块芯片支路失效监测方法

更新时间：2026-07-22

- 基于栅极电流的多芯片IGBT模块芯片支路失效监测方法
- Vol. 47, Issue 4, Pages: 190-200(2026)
- 作者机构：
- 作者简介：
- 基金信息：
- DOI：doi:10.19912/j.0254-0096.tynxb.2025-0968
  CLC： TM464
- Online First：08 May 2026，
  
  Published：2026
- 稿件说明：
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杜明星, 乔浩天, 杨建雄, et al. 基于栅极电流的多芯片IGBT模块芯片支路失效监测方法[J]. 2026, 47(4): 190-200.
DOI：

杜明星, 乔浩天, 杨建雄, et al. 基于栅极电流的多芯片IGBT模块芯片支路失效监测方法[J]. 2026, 47(4): 190-200. DOI： doi:10.19912/j.0254-0096.tynxb.2025-0968.

摘要

针对多芯片并联IGBT模块的芯片支路失效监测问题

该文提出基于栅极电流峰值作为老化敏感参数表征多芯片IGBT模块健康状态的方法。以多芯片IGBT模块为研究对象

分析模块内出现因键合线脱落引发的芯片支路失效对模块导通过程中栅极电容充电动态特性产生的影响

进而研究芯片支路失效与栅极电流变化的关系。然后

通过实验验证该方法的有效性

研究结果证明该方法受结温、集电极-发射极电压、栅极外阻以及栅极驱动电压的影响较小。最后

通过峰值监测电路进行对比实验

研究表明所提基于栅极电流的方法可有效用于光伏逆变器中的多芯片IGBT模块的可靠性评估。

Abstract

To address the challenge of monitoring chip branch failures in multi-chip parallel IGBT modules

this paper proposes a method for characterizing the health status of multi-chip IGBT modules using gate current peak as an aging-sensitive parameter. Taking multi-chip IGBT modules as the research object

the study analyzes the impact of chip branch failures caused by bond wire detachment on the dynamic charging characteristics of the gate capacitor during the conduction process of module

and further investigates the relationship between chip branch failures and changes in gate current. The effectiveness of this method is then verified through experiments. The results demonstrate that the method is less affected by junction temperature

collector-emitter voltage

gate external resistance

and gate drive voltage. Finally

through comparative experiments using a peak monitoring circuit

the study shows that the proposed gate current-based method can effectively be used for reliability assessment of multi-chip IGBT modules in photovoltaic inverters.

关键词

Keywords

references

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