基于集-射极电压初始值校正的焊接型IGBT模块键合线劣化监测方法

杨鹏; 田源; 高树国; 朱瑞敏; 罗茜; 邢超

doi:doi:10.19912/j.0254-0096.tynxb.2024-2188

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基于集-射极电压初始值校正的焊接型IGBT模块键合线劣化监测方法

更新时间：2026-07-22

- 基于集-射极电压初始值校正的焊接型IGBT模块键合线劣化监测方法
- Vol. 47, Issue 4, Pages: 114-125(2026)
- 作者机构：
- 作者简介：
- 基金信息：
- DOI：doi:10.19912/j.0254-0096.tynxb.2024-2188
  CLC： TM46
- Online First：08 May 2026，
  
  Published：2026
- 稿件说明：
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杨鹏, 田源, 高树国, et al. 基于集-射极电压初始值校正的焊接型IGBT模块键合线劣化监测方法[J]. 2026, 47(4): 114-125.
DOI：

杨鹏, 田源, 高树国, et al. 基于集-射极电压初始值校正的焊接型IGBT模块键合线劣化监测方法[J]. 2026, 47(4): 114-125. DOI： doi:10.19912/j.0254-0096.tynxb.2024-2188.

摘要

集电极-发射极饱和压降Vce

sat会随绝缘栅双极晶体管（IGBT）模块键合线脱落而增加因此常被用作器件劣化监测的特征参量

但在实际功率模块运行中

Vce

sat受结温Tj和集电极电流Ic的双重影响

提出一种基于集-射极电压特征参量初始值校正的焊接型IGBT模块键合线劣化监测方法。通过对不同温度下IGBT输出特性曲线进行数学建模

分析Tj和Ic与Vce

sat之间的关系

建立不同Tj和Ic条件下Vce

sat的理论值计算方程。在实际监测中

利用该方程计算功率模块不同运行工况下对应的Tj和Ic条件下的Vce

sat初始值

从而实现集-射极饱和压降增幅η的电压初始值校正

以降低Tj和Ic对η的影响。通过人为剪断键合线方式模拟键合线脱落情况

对比分析电压初始值校正前后η的变化。结果表明

在IGBT模块达到失效临界之前

该方法能显著减小Tj和Ic对η的影响

使Vce

sat的增加主要由键合线劣化决定。实验结果与理论分析一致

验证了该方法在不同工况下监测IGBT模块键合线失效的可行性和工程适用性。

Abstract

The collector-emitter saturation voltage （） of an insulated gate bipolar transistor（IGBT） module increases with bond wire lift-off

making it a common characteristic parameter for degradation monitoring. However

during actual operation

is influenced by both junction temperature （） and collector current （）. This paper proposes a bond wire degradation monitoring method for wire-bonded IGBT modules based on initial-value correction of the collector-emitter voltage characteristic parameter. By mathematically modeling the IGBT output characteristic curves at different temperatures

the relationships among

and are analyzed

and an equation for calculating the theoretical under varying and conditions is established. During monitoring

this equation is used to compute the initial corresponding to actual and under different operating conditions

thereby achieving initial-value correction for the normalized increase in saturation voltage. This correction reduces the influence of and on. In this study

bond wire degradation was simulated by deliberately cutting wires

and changes in before and after correction were compared. The results show that

prior to the failure threshold

the proposed method significantly mitigates the effects of and on

ensuring that the increase in is primarily attributable to bond wire degradation. The experimental results align well with theoretical analysis

confirming the feasibility and engineering applicability of this method for monitoring bond wire failure in IGBT modules under varying operating conditions.

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references

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