模拟优化硼掺杂多晶硅提升交叉背接触电池性能

储余; 厉佥元; 刘焱康; 孟阳; 张传香; 陶海军

doi:doi:10.19912/j.0254-0096.tynxb.2024-2041

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模拟优化硼掺杂多晶硅提升交叉背接触电池性能

更新时间：2026-04-08

- 模拟优化硼掺杂多晶硅提升交叉背接触电池性能
- Vol. 47, Issue 3, Pages: 747-752(2026)
- 作者机构：
- 作者简介：
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- DOI：doi:10.19912/j.0254-0096.tynxb.2024-2041
  CLC： TK914
- Online First：07 April 2026，
  
  Published：2026
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储余, 厉佥元, 刘焱康, et al. 模拟优化硼掺杂多晶硅提升交叉背接触电池性能[J]. 2026, 47(3): 747-752.
DOI：

储余, 厉佥元, 刘焱康, et al. 模拟优化硼掺杂多晶硅提升交叉背接触电池性能[J]. 2026, 47(3): 747-752. DOI： doi:10.19912/j.0254-0096.tynxb.2024-2041.

摘要

利用Quokka3模拟软件

系统分析硼掺杂多晶硅（p-poly）的钝化性能、接触性能及图形设计对交叉背接触（IBC）电池性能的影响。在此基础上

详细讨论隧穿氧化层界面复合大小、多晶硅层掺杂浓度及硅基体内扩区对p-poly钝化性能的影响

阐述实现p-poly优异钝化性能的必要条件。

Abstract

Using the Quokka3 simulation software

we systematically analyze the impact of boron-doped polysilicon （p-poly） passivation and contact performance

as well as pattern design

on the performance of interdigitated back contact （IBC） solar cells. On this basis

we further discuss in detail the effects of the tunnel oxide interface recombination rate

the doping concentration of the polysilicon layer

and the diffusion region formed in the silicon substrate on the passivation performance of p-poly

and we outline the essential conditions required to achieve excellent passivation performance with p-poly passivating contacts.

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references

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