基于染料表面改性的GeSe薄膜光电性能研究

张文艺; 吴海峰; 韩莹键; 段凯强; 王耀翔; 王瑞祥

doi:doi:10.19912/j.0254-0096.tynxb.2024-1454

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基于染料表面改性的GeSe薄膜光电性能研究

更新时间：2026-01-08

- 基于染料表面改性的GeSe薄膜光电性能研究
- Vol. 46, Issue 12, Pages: 161-167(2025)
- 作者机构：
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- DOI：doi:10.19912/j.0254-0096.tynxb.2024-1454
  CLC： TM914
- Published Online：07 January 2026，
  
  Published：2025
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张文艺, 吴海峰, 韩莹键, et al. 基于染料表面改性的GeSe薄膜光电性能研究[J]. 2025, 46(12): 161-167.
DOI：

张文艺, 吴海峰, 韩莹键, et al. 基于染料表面改性的GeSe薄膜光电性能研究[J]. 2025, 46(12): 161-167. DOI： doi:10.19912/j.0254-0096.tynxb.2024-1454.

摘要

为提升GeSe薄膜的光吸收性能和PCE

提出一种染料表面改性方法

使用罗丹明B（RB）、亚甲基蓝（MB）和刚果红（CR）等单染料及其混合物对GeSe薄膜进行修饰。实验结果显示

所有染料修饰后的GeSe薄膜光吸收能力均有显著提升

其中RB+MB混合染料效果最明显。通过Scaps-1D软件模拟不同染料修饰的GeSe薄膜太阳电池性能

发现MB修饰的GeSe薄膜PCE最高

达到26.32%

而RB+MB改性PCE较低

可能由于过高的染料负载与电池其他性能参数不匹配所致。研究证明了染料改性的可行性。

Abstract

To enhance the light absorption properties and PCE of GeSe thin films

this study proposes a dye-sensitization surface modification method

employing single dyes such as Rhodamine B （RB）

Methylene Blue （MB）

and Congo Red （CR）

as well as their mixtures

to modify the GeSe thin films. Experimental results show that the light absorption capacity of all dye-modified GeSe thin films is significantly improved

with the RB+MB mixed dye demonstrating the most pronounced effect. By simulating the performance of dye-modified GeSe thin-film solar cells using Scaps-1D software

it is found that the GeSe thin film modified with MB exhibits the highest PCE

reaching 26.32 %

whereas the RB+MB modification results in a lower PCE

possibly due to excessive dye loading not being well-matched with other cell performance parameters. This study demonstrates the feasibility of dye-based modification.

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references

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