大直径连续拉晶状态下径向电阻率影响机理

何显; 李进; 王忠良; 白楠; 瞿立; 周春玲

doi:doi:10.19912/j.0254-0096.tynxb.2024-1364

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大直径连续拉晶状态下径向电阻率影响机理

更新时间：2026-01-08

- 大直径连续拉晶状态下径向电阻率影响机理
- Vol. 46, Issue 12, Pages: 271-276(2025)
- 作者机构：
- 作者简介：
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- DOI：doi:10.19912/j.0254-0096.tynxb.2024-1364
  CLC： O782
- Published Online：07 January 2026，
  
  Published：2025
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何显, 李进, 王忠良, et al. 大直径连续拉晶状态下径向电阻率影响机理[J]. 2025, 46(12): 271-276.
DOI：

何显, 李进, 王忠良, et al. 大直径连续拉晶状态下径向电阻率影响机理[J]. 2025, 46(12): 271-276. DOI： doi:10.19912/j.0254-0096.tynxb.2024-1364.

摘要

利用STR公司开发设计的专业晶体生长模拟软件CGSim

结合晶体动力学和热力学

选用N型单晶硅常用掺杂剂磷

按多晶硅质量的10-7倍添加磷单质作掺杂剂

选取8种不同坩埚转速7~14 r/min

6种不同晶体转速6~11 r/min

在更高拉晶速率1.8 mm/min下做正交模拟实验得到电阻率变化。通过分析内坩埚熔体温场及流场、外坩埚熔体温场及流场、固液界面、晶体中缺陷等参数

得出合适的坩埚转速、晶体转速

与固液界面处的磷浓度转换为电阻率得到的径向电阻率变化做对比

探讨连续直拉单晶硅径向电阻率的影响机理。

Abstract

Utilizing CGSim

a professional crystal growth simulation software developed and designed by STR

combining crystal dynamics and thermodynamics

selecting N-type monocrystalline silicon commonly used dopant phosphorus is selected

according to the polycrystalline silicon mass of 10 times to add phosphorus monomers as dopant

meanwhile selecting eight different crucible rotate speeds of 7-14 r/min and six different crystal rotate speeds of 6-11 r/min are selected

and orthogonal simulation experiments with a higher crystal pulling rate of 1.8 mm/min were conducted to obtain the change of electrical resistivity. By analyzing the parameters of inner crucible melt temperature field and flow field

outer crucible melt temperature field and flow field

solid-liquid interface

defects in the crystal

appropriate crucible rotational speed and crystal rotational speed were obtained. By comparing with the radial resistivity change obtained by converting the phosphorus concentration to the resistivity at the solid-liquid interface

the influencing mechanism of the radial resistivity of the continuous direct-drawing monocrystalline silicon was researched.

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references

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