基于结温免疫电参数组合的IGBT模块键合线老化监测方法

范合畅; 杜明星

doi:doi:10.19912/j.0254-0096.tynxb.2024-1193

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基于结温免疫电参数组合的IGBT模块键合线老化监测方法

更新时间：2025-12-10

- 基于结温免疫电参数组合的IGBT模块键合线老化监测方法
- Issue 11, Pages: 244-250(2025)
- 作者机构：
- 作者简介：
- 基金信息：
- DOI：doi:10.19912/j.0254-0096.tynxb.2024-1193
  CLC： N322
- Published Online：04 December 2025，
  
  Published：04 December 2025
- 稿件说明：
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范合畅, 杜明星. 基于结温免疫电参数组合的IGBT模块键合线老化监测方法[J]. 2025, (11): 244-250.
DOI：

范合畅, 杜明星. 基于结温免疫电参数组合的IGBT模块键合线老化监测方法[J]. 2025, (11): 244-250. DOI： doi:10.19912/j.0254-0096.tynxb.2024-1193.

摘要

摘要：提出一种基于结温免疫电参数组合的绝缘栅双极晶体管（IGBT）模块内部键合线老化监测方法。研究IGBT模块的阈值电压、跨导、键合线老化和结温之间的关系。IGBT模块跨导包含有关键合线老化状态和结温变化的信息。阈值电压作为估算结温的最佳参数之一

在测量时间较短、键合线断裂未引起明显结温差时

无法评估键合线老化状态。利用模块跨导和阈值电压之间键合线老化表征的差异

可消除实际应用工况下多因素造成的温升差对键合线老化状态监测的影响。

Abstract

This paper proposes a method for monitoring the internal bond wire aging of IGBT modules based on the combination of junction-temperature-immune electrical parameters. The relationships among the threshold voltage

transconductance

bond wire aging and junction temperature of IGBT modules are investigated. The transconductance of IGBT modules contains information about the aging state of the bond wire and the change of junction temperature. Threshold voltage

one of the best parameters for estimating junction temperature

is not able to assess the bond wire aging state when the measurement time is short and the bond wire breakage does not cause significant junction temperature difference. Using the difference in bond wire aging characterization between the module transconductance and threshold voltage

the influence of temperature differences caused by multiple factors on the monitoring of bond wire aging state under practical operating conditions is eliminated.

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references

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