晶体硅太阳电池的BaF<sub>x</sub>电子选择性接触研究

狄翀; 李文昊; 陈静伟; 丁阳; 韦德远; 许颖

doi:doi:10.19912/j.0254-0096.tynxb.2024-0284

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晶体硅太阳电池的BaF_x电子选择性接触研究

更新时间：2025-12-02

- 晶体硅太阳电池的BaF_x电子选择性接触研究
- Vol. 46, Issue 6, Pages: 245-250(2025)
- 作者机构：
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- DOI：doi:10.19912/j.0254-0096.tynxb.2024-0284
  CLC： TM615
- Published Online：07 July 2025，
  
  Published：2025
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狄翀, 李文昊, 陈静伟, et al. 晶体硅太阳电池的BaF_x电子选择性接触研究[J]. 2025, 46(6): 245-250.
DOI：

狄翀, 李文昊, 陈静伟, et al. 晶体硅太阳电池的BaF_x电子选择性接触研究[J]. 2025, 46(6): 245-250. DOI： doi:10.19912/j.0254-0096.tynxb.2024-0284.

摘要

研究一种利用电子束蒸发方法制备的超薄氟化钡（BaFx）薄膜的材料特性

并将其应用为晶体硅异质结电池的新颖的、输运电子而阻挡空穴的免掺杂选择性接触传输材料。紫外光电子能谱测试表明BaFx/Al界面的功函数为2.55 eV

低于铝本身的功函数（4.26 eV）

可实现对电子的选择性传输功能。加入BaFx导致Al电极和晶体硅之间形成欧姆接触

并实现23.98 mΩ·cm2的低接触电阻率。将此异质结构作为轻掺杂n型单晶硅太阳电池的免掺杂整背面欧姆接触

使电池的填充因子和短路电流密度都有所提升

并最终实现电池的绝对能量转换效率2.53%的提升。

Abstract

The material properties of an ultrathin barium fluoride （BaF） thin film prepared by electron beam evaporation method are investigated and applied as a novel

undoped selective contact transport material for crystalline silicon heterojunction batteries that transport electrons while blocking holes. Ultraviolet photoelectron spectroscopy （UPS） tests show that the BaF/Al interface has a work function of 2.55 eV

which is lower than that of aluminum itself （4.26 eV）

enabling a selective transport function for electrons. The addition of BaF leads to the formation of an ohmic contact between the aluminum electrodes and the crystalline silicon

and achieving a low contact resistivity of 23.98 mΩ·cm. The use of this heterostructure as a doping-free whole backside ohmic contact for lightly doped n-type monocrystalline silicon solar cells leads to an increase in both the cell's fill factor and short-circuit current density

and ultimately achieves an increase in the cell's absolute energy conversion efficiency of 2.53%.

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references

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晶体硅太阳电池的BaFx电子选择性接触研究

DOI：doi:10.19912/j.0254-0096.tynxb.2024-0284

摘要

Abstract

关键词

Keywords

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晶体硅太阳电池的BaF_x电子选择性接触研究