p型TOPCon晶体硅太阳电池局域硼重掺杂发射极的光电性能研究

林文杰; 王皓正; 余学功; 王永谦; 邱开富

doi:doi:10.19912/j.0254-0096.tynxb.2024-0215

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p型TOPCon晶体硅太阳电池局域硼重掺杂发射极的光电性能研究

更新时间：2025-12-02

- p型TOPCon晶体硅太阳电池局域硼重掺杂发射极的光电性能研究
- Vol. 46, Issue 6, Pages: 238-244(2025)
- 作者机构：
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- DOI：doi:10.19912/j.0254-0096.tynxb.2024-0215
  CLC： TM914
- Published Online：07 July 2025，
  
  Published：2025
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林文杰, 王皓正, 余学功, et al. p型TOPCon晶体硅太阳电池局域硼重掺杂发射极的光电性能研究[J]. 2025, 46(6): 238-244.
DOI：

林文杰, 王皓正, 余学功, et al. p型TOPCon晶体硅太阳电池局域硼重掺杂发射极的光电性能研究[J]. 2025, 46(6): 238-244. DOI： doi:10.19912/j.0254-0096.tynxb.2024-0215.

摘要

该文研究硼重掺杂发射极的表面形貌和硼扩散工艺对光照钝化区域和金属接触区域的钝化性能、接触性质和寄生吸收以及电池性能的影响。对比抛光样品

制绒样品具有更低接触电阻测试值（2.5~3.2 mΩ·cm2）才能实现高效局域p++接触的p-TOPCon电池设计。采用3000 s的硼扩推进时间和更低接触电阻的新AgAl栅线接触（0.5 mΩ·cm2）

权衡金属接触区域的接触性能、光照区域的光电特性和生产成本的影响

将局域p++接触的p-TOPCon电池模拟效率提高至24.62%。

Abstract

This work investigates the effects of the surface morphology and boron diffusion process of boron heavily doped emitter on the passivation properties

contact property and parasitic absorption in the illuminated passivation region and metal contact region

and solar cell performance. Compared with the polished samples

the textured samples show a lower contact resistance of 2.5-3.2 mΩ·cm

allowing a higher efficiency for p-TOPCon solar cells with localized p contact. By using the boron driving-in-time of 3000 s and the new AgAl contact with a lower contact resistance of 0.5 mΩ·cm

the contact characteristics of the metal contact area

the photoelectric characteristics of the passivated area

and the production cost of the boron diffusion are optimized. The optimized p-TOPCon solar cells achieve an efficiency of 24.62%.

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references

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