Transient Characteristic of MOESFET Based on Cosimulation Simulink with COMSOL

GAO Bing; WANG Shuai; ZHONG Yongheng; SUN Yasen; ZHANG Shangchen; ZHOU Jie

doi:10.3969/j.issn.1008-0198.2022.05.001

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Transient Characteristic of MOESFET Based on Cosimulation Simulink with COMSOL

更新时间：2025-06-11

- Transient Characteristic of MOESFET Based on Cosimulation Simulink with COMSOL
- Vol. 42, Issue 5, Pages: 1-7(2022)
- 作者机构：
  
  1. 湖南大学电气与信息工程学院,湖南,长沙,410012
  2. 国网湖南省电力有限公司电力科学研究院,湖南,长沙,410007
- 作者简介：
- 基金信息：
- DOI：10.3969/j.issn.1008-0198.2022.05.001
  CLC： TM73TN386
- Published：2022
- 稿件说明：
移动端阅览
高兵, 王帅, 钟永恒, 孙雅森, 张尚琛, 周婕. 基于Simulink与COMSOL联合仿真的MOS场效晶体管瞬态特性分析[J]. 湖南电力, 2022, 42(5): 1-7.

GAO Bing, WANG Shuai, ZHONG Yongheng, et al. Transient Characteristic of MOESFET Based on Cosimulation Simulink with COMSOL[J]. 2022, 42(5): 1-7.
高兵, 王帅, 钟永恒, 孙雅森, 张尚琛, 周婕. 基于Simulink与COMSOL联合仿真的MOS场效晶体管瞬态特性分析[J]. 湖南电力, 2022, 42(5): 1-7. DOI： 10.3969/j.issn.1008-0198.2022.05.001.

GAO Bing, WANG Shuai, ZHONG Yongheng, et al. Transient Characteristic of MOESFET Based on Cosimulation Simulink with COMSOL[J]. 2022, 42(5): 1-7. DOI： 10.3969/j.issn.1008-0198.2022.05.001.

摘要

功率器件是电力电子系统中的薄弱环节之一

其失效具有明显的多尺度特征

构建能够考虑功率器件多尺度特征的瞬态模型对器件状态监测与老化评估具有重要意义。以MOS场效晶体管(metal-oxide-semiconductor field effect transistor

MOSFET)为研究对象

构建了功率器件Simulink与COMSOL场路联合仿真模型

选取以导通电流和导通压降为模型交互信息

实现器件开关信息和宏观物理信息交互作用的器件瞬态特性分析。在此基础上

分析功率器件芯片处均温(壳温)、芯片上表面均温(结温)、导通压降、芯片电阻、焊料层最大位移。结果表明

所构建模型能够有效反映器件开关特性和宏观场间的交互

为器件数字孪生模型奠定基础。

Abstract

Power devices are one of the weak links in power electronic systems

and their failure has obvious multi-scale characteristics. It is of great significance to build a transient model that can consider the multi-scale characteristics of power devices for device condition monitoring and aging evaluation. Therefore

this paper takes MOSFET as the research object

constructs the field circuit joint simulation model of power device Simulink and COMSOL

and realizes the transient characteristic analysis of devices considering the interaction of device switching information and macro physical information by selecting the on current and on voltage drop as the model interaction information. The average temperature at the chip (shell temperature)

the average temperature on the surface of the chip (junction temperature)

the conduction voltage drop

the chip resistance and the maximum displacement of the solder layer are analyzed. The results show that the model can effectively consider the switching characteristics of devices and the interaction between macro fields

and lay the foundation for the digital twin model of devices.

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Keywords

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