Ferroelectric, Magnetic Properties and Leakage Currents of SrBi2Ta2O9/LaNiO3 Heterostructure Thin Films

Li Wan-peng; Liu Qiu-xiang

doi:10.3969/j.issn.1007-7162.2014.02.023

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Ferroelectric, Magnetic Properties and Leakage Currents of SrBi₂Ta₂O₉/LaNiO₃ Heterostructure Thin Films

更新时间：2026-05-27

- Ferroelectric, Magnetic Properties and Leakage Currents of SrBi₂Ta₂O₉/LaNiO₃ Heterostructure Thin Films
- Vol. 31, Issue 2, Pages: 117-120(2014)
- 作者机构：
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- DOI：10.3969/j.issn.1007-7162.2014.02.023
  CLC： O611
- Online First：06 June 2014，
  
  Published：2014
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李万朋, 刘秋香. 异质结薄膜的铁电、磁性能及漏电流研究[J]. 广东工业大学学报, 2014, 31(2): 117-120.

Li Wan-peng, Liu Qiu-xiang. Ferroelectric, Magnetic Properties and Leakage Currents of SrBi₂Ta₂O₉/LaNiO₃ Heterostructure Thin Films[J]. 2014, 31(2): 117-120. DOI: 10.3969/j.issn.1007-7162.2014.02.023.
李万朋, 刘秋香. 异质结薄膜的铁电、磁性能及漏电流研究[J]. 广东工业大学学报, 2014, 31(2): 117-120. DOI： 10.3969/j.issn.1007-7162.2014.02.023.

Li Wan-peng, Liu Qiu-xiang. Ferroelectric, Magnetic Properties and Leakage Currents of SrBi₂Ta₂O₉/LaNiO₃ Heterostructure Thin Films[J]. 2014, 31(2): 117-120. DOI: 10.3969/j.issn.1007-7162.2014.02.023. DOI：

摘要

采用溶胶凝胶方法在Si（100）衬底上生长了SrBi2Ta2O9/LaNiO3 (SBT/LNO)异质结薄膜，其中SrBi2Ta2O9薄膜呈高度（115）取向.测量了不同退火温度下异质结的电滞回线和漏电流密度，结果表明，700 ℃下退火的薄膜剩余极化值最高，漏电流最低，且表现出弱的室温铁磁行为.漏电流机理分析表明薄膜界面为欧姆接触.

Abstract

SrBi2Ta2O9(SBT)/LaNiO3 (LNO) heterostructure thin films were grown on Si(100) substrate by using a sol-gel process. XRD results reveal high (115) orientation of SrBi2Ta2O9 thin film. The hysteresis loops and leakage current density of the films annealed at different temperatures were measured. The film annealed at 700 ℃ showes the lowest leakage current density and a well saturated P-E hysteresis loop with the largest remnant polarization (Pr) of 716 uC/cm

. Leakage mechanism analysis suggests an Ohmic conduction. In addition

the SBT/LNO heterostructures annealed at 700 ℃ exhibit a weak room-temperature ferromagnetic behavior.

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