With the advancement of crystalline silicon solar cell technology
tunneling oxide passivatel contact (TOPCon) solar cells have gradually become the dominant technology in industrial silicon solar cells. An ultra-thin silicon oxide (SiO) layer was fabricated by combining wet oxidation with plasma-enhanced oxidation (PEO) methods. The effects of different film thickness combinations on the uniformity of the SiO layer
as well as on the appearance
passivation performance and electrical properties of TOPCon solar cells
were investigated. The results demonstrate that as the thickness of the wet oxidation layer increases and the thickness of the PEO layer decreases
the uniformity of the SiO film gradually improves
while the Grade A yield
passivation performance and electrical properties of the cells first increase and then decrease. When the wet oxidation layer thickness is 0.6 nm and the PEO layer thickness is 1 nm
the Grade A yield
passivation performance and electrical properties of the solar cells reach the optimal level. At this point
the Grade A yield of the cells reaches 97.09%
the minority carrier lifetime reaches 1859 μs
the implied open-circuit voltage () and recombination current density () are 742 mV and 6.99 fA/cm²
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