RESEARCH PROGRESS IN PREPARATION TECHNOLOGY OF LARGE-SIZED PHOTOVOLTAIC MONOCRYSTALLINE SILICON

Kang Jiaming; Huang Zhenling; Li Tai; Zhao Liang; Zhou Xiang; Lyu Guoqiang

doi:10.19912/j.0254-0096.tynxb.2023-1746

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RESEARCH PROGRESS IN PREPARATION TECHNOLOGY OF LARGE-SIZED PHOTOVOLTAIC MONOCRYSTALLINE SILICON

更新时间：2025-10-18

- RESEARCH PROGRESS IN PREPARATION TECHNOLOGY OF LARGE-SIZED PHOTOVOLTAIC MONOCRYSTALLINE SILICON
- Vol. 46, Issue 3, Pages: 310-319(2025)
- 作者机构：
  
  1. 昆明理工大学冶金与能源工程学院,昆明 650093
  2. 云南省硅工业工程研究中心,昆明 650093
- 作者简介：
- 基金信息：
- DOI：10.19912/j.0254-0096.tynxb.2023-1746
  CLC： TN304.12
- Published Online：07 April 2025，
  
  Published：2025
- 稿件说明：
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康家铭, 黄振玲, 李太, 赵亮, 周翔, 吕国强. 大尺寸光伏单晶硅制备技术研究进展[J]. 太阳能学报, 2025, 46(3): 310-319.

Kang Jiaming, Huang Zhenling, Li Tai, et al. RESEARCH PROGRESS IN PREPARATION TECHNOLOGY OF LARGE-SIZED PHOTOVOLTAIC MONOCRYSTALLINE SILICON[J]. 2025, 46(3): 310-319.
康家铭, 黄振玲, 李太, 赵亮, 周翔, 吕国强. 大尺寸光伏单晶硅制备技术研究进展[J]. 太阳能学报, 2025, 46(3): 310-319. DOI： 10.19912/j.0254-0096.tynxb.2023-1746.

Kang Jiaming, Huang Zhenling, Li Tai, et al. RESEARCH PROGRESS IN PREPARATION TECHNOLOGY OF LARGE-SIZED PHOTOVOLTAIC MONOCRYSTALLINE SILICON[J]. 2025, 46(3): 310-319. DOI： 10.19912/j.0254-0096.tynxb.2023-1746.

摘要

针对现有大尺寸光伏级单晶硅多次装料拉晶技术（RCZ）、炉外加料技术（OCZ）、连续装料拉晶技术（CCZ）等制备技术的研究现状及特点进行归纳总结

对比分析几种光伏单晶硅制备技术在大尺寸、高品质、低成本方面的优势和难点

并结合未来硅料来源分析对光伏单晶硅生长技术的发展做出展望。

Abstract

This paper summarizes the research status and characteristics of existing large-size photovoltaic grade monocrystalline silicon preparation technologies such asrecharged Czochralski（RCZ）and off-furnace charged Czochralski（OCZ）

continuous Czochralski（CCZ）

etc.

compares and analyzes the advantages and difficulties of several photovoltaic monocrystalline silicon preparation technologies in terms of large-size

high quality

and low cost

and makes prospects for the development of photovoltaic monocrystalline silicon growth technology based on the analysis of future silicon material sources.

关键词

Keywords

references

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