YANG Jianrong, WU Haojin, ZHUANG Zhonghua, et al. Numerical simulation of a novel narrow-band metamaterial emitter for high-efficiency thermophotovoltaic power generation system[J]. Thermal power generation, 2023, 52(10): 71-78.
DOI:
YANG Jianrong, WU Haojin, ZHUANG Zhonghua, et al. Numerical simulation of a novel narrow-band metamaterial emitter for high-efficiency thermophotovoltaic power generation system[J]. Thermal power generation, 2023, 52(10): 71-78. DOI: 10.19666/j.rlfd.202305371.
Numerical simulation of a novel narrow-band metamaterial emitter for high-efficiency thermophotovoltaic power generation system
摘要
肖克利-奎伊瑟(SQ)极限为常规半导体光伏器件的效率设置了上限。热光伏系统(由热源、光谱选择性辐射器和低禁带光伏电池组成)可以作为一种替代方案,以突破这一理论效率的限制。为提高热光伏系统的发电效率,基于超材料设计了一个多层十字架结构的辐射器,对其几何尺寸优化后,该辐射器展示出良好的窄带发射光谱。这既减少了光伏电池禁带以下的低能光子损失,又避免了高能光子被吸收后加剧晶格振动而造成热损失。将该辐射器用于热光伏系统可以实现与禁带能量为0.6 e V的In0.69Ga0.31As电池完美匹配。通过对该辐射器与光伏电池联用系统的详细理论计算得到:在1 117℃下可以实现发电效率突破SQ极限(41%);并且随着辐射器温度升高,发电效率会进一步提高,在2 000 K时电池输出效率高达46.75%;此外,该窄带辐射器在0°~60°内具有良好的角度不敏感性以及极化不敏感性。
Abstract
The Shockley-Queisser(SQ) limit sets an upper limit on the efficiency of conventional semiconductor photovoltaic devices. A thermophotovoltaic system(consisting of a heat source
a spectrally selective emitter and low bandgap photovoltaic cell) can work as an alternative to break this theoretical efficiency limit. To further improve the power generation efficiency of thermophotovoltaic(TPV) systems
an emitter with a multilayer cross structure based on metamaterials was designed in this work. Through optimization of its geometric size
the emitter demonstrates an excellent narrow-band emission spectrum. This effectively reduces the loss of low-energy photons below the bandgap of PV cells and avoids the absorption of high-energy photons that exacerbate lattice vibrations to cause thermal losses. Its application to TPV systems enables a perfect match with In0.69Ga0.31As cells with a bandgap of 0.6 eV. Detailed theoretical calculations of this TPV system show that the power generation efficiency can exceed the Shockley-Queisser(SQ) limit(41%) at 1 117 ℃
and will be further improved as the emitter temperature increases. When the temperature reaches 2 000 K
the efficiency is as high as 46.75%. Additionally
the narrowband emitter shows good angular insensitivity in the range of 0~60 degrees.