In a press-pack insulated gate bipolar transistor (IGBT)

a compact packaging structure forms a strong electromagnetic coupling

thermal coupling

and stress coupling

threatening current sharing

temperature sharing

and stress sharing of paralleled chips. Optimized layouts are proposed based on the inductance analytical model to improve the performance and reliability of Press-Pack IGBT devices. What's more

transient and steady-state co-simulation using an improved behavioral model is performed to verify the proposed layout. In the test

the PCB Rogowski coil

direct thermocouple

and force-sensitive parameters fittings are used to measure the current distribution

temperature distribution

and stress distribution. The simulation and test results indicate that a rotationally symmetrical layout with IGBT surrounding the FRD mode can achieve uniform current

temperature

and stress.