Time-domain and Frequency-domain Analyses of PETT Oscillation in Press Pack IGBTs

Jiayu Fan; Xiang Cui; Xinling Tang; Cheng Peng; Zhibin Zhao; Xiangrui Meng; Xuebao Li; Zhong Chen

doi:10.17775/CSEEJPES.2021.05770

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Time-domain and Frequency-domain Analyses of PETT Oscillation in Press Pack IGBTs

Regular Papers | 更新时间：2026-10-15

- Time-domain and Frequency-domain Analyses of PETT Oscillation in Press Pack IGBTs
- CSEE Journal of Power and Energy Systems Vol. 9, Issue 2, Pages: 682-695(2023)
- 作者机构：
  
  1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electrical Power University,Beijing,China
  2. State Key Laboratory of Advanced Power Transmission Technology, Power Semiconductor Devices Research Institute, Global Energy Interconnection Research Institute Co., Ltd.,Beijing,China
  3. Department of Electrical Engineering, University of Arkansas,AR,Fayetteville,USA
- 作者简介：
- 基金信息：
- DOI：10.17775/CSEEJPES.2021.05770
  CLC：
- Published：01 March 2023
- 稿件说明：
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Jiayu Fan, Xiang Cui, Xinling Tang, et al. Time-domain and Frequency-domain Analyses of PETT Oscillation in Press Pack IGBTs[J]. CSEE Journal of Power and Energy Systems, 2023, 9(2): 682-695.
DOI：

Jiayu Fan, Xiang Cui, Xinling Tang, et al. Time-domain and Frequency-domain Analyses of PETT Oscillation in Press Pack IGBTs[J]. CSEE Journal of Power and Energy Systems, 2023, 9(2): 682-695. DOI： 10.17775/CSEEJPES.2021.05770.

摘要

Abstract

Plasma extraction transit time (PETT) oscillation might appear in IGBT devices

which is harmful to the electromagnetic compatibility (EMC) of a renewable energy system. To eliminate this oscillation

its frequency-domain characteristics in wire-bonded IGBT devices have been extensively studied. However

the time-domain analysis of PETT oscillation

especially in Press Pack IGBT (PPI) devices

has not attracted enough attention yet. In this paper

PETT oscillations with multi-chips in PPI devices are systematically investigated by experiments. It is first reported there are multiple resonant oscillations at the tail period when multi-chips turn off. Oscillations overlap in the time domain waveforms

which lead PETT oscillation to be more serious in multi-chips. Then

PETT oscillation is divided into three different feedback states for the first time. For the IGBT chip in the PETT oscillation

its physical based model and behavior model are proposed

which further form the equivalent circuit as the two-port network. Moreover

it is indicated that only parallel resonances can lead to PETT oscillation

which is consistent with experiment results.

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