Review of MOSFET resonant gate drive circuit research
摘要
谐振门极驱动电路能够减小高频下MOSFET的驱动损耗。首先介绍了传统电压源驱动及其存在的诸多问题
引出谐振驱动技术。综述了目前现有的谐振门极驱动电路的拓扑结构
并分为电流源型、谐振型和耦合电感型三大类。对于电流源型和谐振型
分别介绍较早提出的拓扑结构及其优缺点
并与后期发展的各种拓扑作对比分析。耦合电感型是在电流源型或谐振型中加入耦合电感来传递能量
这也增加了拓扑的复杂度。考虑谐振门极驱动电路的复杂程度
将拓扑元器件集成到一个芯片中以达到优化。
Abstract
Resonant gate drive circuit can reduce the driving loss of MOSFET at high frequency. Firstly
the traditional voltage source driver and its problems are introduced
and then the resonant drive technology is introduced.The current topologies of resonant gate drive circuits are summarized and divided into three types:current source prototype
resonant prototype and coupled inductor prototype. The advantages and disadvantages of the current source prototype and resonant prototype proposed earlier are respectively introduced
and compared with the later development of various topologies. The coupled inductor prototype is adding coupled inductor to current source prototype or resonant prototype for energy transmission
which also increases the complexity of the topology. Considering the complexity of the resonant gate drive circuits
the topology components are integrated into a chip to achieve optimization.