In order to address the issue of low simulation efficiency in the electromagnetic transient simulation of integrated gate commutated thyristor (IGCT)-based converters

a fast electromagnetic transient equivalent modeling method for IGCT-based converters based on Thevenin’s equivalent is proposed. First

the topology of IGCT-based converter and DC transmission system based on IGCT converter are introduced. Secondly

the logic for determining the switching state of the devices of an IGCT-based converter is analyzed. Furthermore

a fast equivalent modeling method for the bridge arm of the IGCT-based converter is proposed using Thevenin’s equivalent

and the electromagnetic transient simulation process with the fast equivalent model of the IGCT-based converter is analyzed. Finally

a typical IGCT-based DC transmission system is selected as a case study

and a comparative validation is conducted between the proposed fast equivalent model and the detailed model. The comparison results show that the proposed fast equivalent model achieves a simulation accuracy deviation within 1% compared to the detailed model

while reducing the computation time by more than 30%

thus significantly improving simulation efficiency.