The SiC metal-oxide-semiconductor field-effect transistor (SiC MOSFET) features high power density but poor short-circuit withstand capability

making the design of fast and reliable short-circuit protection circuits critical for its application. Traditional di/dt detection-based short-circuit protection circuits suffer from poor interference immunity and limited detection flexibility. Additionally

during load faults

the short-circuit current peaks are high

making it difficult to meet the short-circuit protection requirements of SiC MOSFET in practical applications. This paper proposes a dual-threshold detection short-circuit protection circuit for SiC MOSFET

offering high flexibility and strong reliability by eliminating the restrictive relationship between two short-circuit current thresholds. The proposed RD parallel branch and detection circuit filter inductor design effectively suppress high-frequency stray signals

reducing interference to the detection circuit while lowering the short-circuit current peak during load faults and improving overall reliability. Finally

a prototype of the short-circuit protection circuit is designed and developed

and experimental verification is conducted under voltages of 300

400

and 500 V. The results show that the proposed design achieves fast protection within ≤ 200 ns for both hard-switching faults and load faults

with the load fault detection speed improved by over 20% compared to the traditional methods. Under the 500 V bus voltage

the short-circuit current peak during load faults is reduced by 25% compared to traditional methods under the same conditions.