Overview of Degradation Mechanisms and Status Detection for Wire-bond and Press-pack IGBTs

HE Yunze; LI Qiying; ZHANG Chaofeng; CHANG Shan; KANG Wen; GENG Xuefeng; TANG Longhai; PING Yang; ZHANG Jie; HE Hongying; LI Zuosheng

doi:10.13334/j.0258-8013.pcsee.241799

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Overview of Degradation Mechanisms and Status Detection for Wire-bond and Press-pack IGBTs

更新时间：2026-01-17

- Overview of Degradation Mechanisms and Status Detection for Wire-bond and Press-pack IGBTs
- Vol. 45, Issue 19, Pages: 7721-7742(2025)
- 作者机构：
  
  1. 湖南大学电气与信息工程学院,湖南省,长沙市,410082
  2. 国网湖南省电力有限公司超高压变电公司,湖南省,长沙市,410004
  3. 变电智能运检国网湖南省电力有限公司实验室,湖南省,长沙市,410004
- 作者简介：
- 基金信息：
- DOI：10.13334/j.0258-8013.pcsee.241799
  CLC：
- Published：2025
- 稿件说明：
移动端阅览
HE Yunze, LI Qiying, ZHANG Chaofeng, et al. Overview of Degradation Mechanisms and Status Detection for Wire-bond and Press-pack IGBTs[J]. 2025, 45(19): 7721-7742.
DOI：

HE Yunze, LI Qiying, ZHANG Chaofeng, et al. Overview of Degradation Mechanisms and Status Detection for Wire-bond and Press-pack IGBTs[J]. 2025, 45(19): 7721-7742. DOI： 10.13334/j.0258-8013.pcsee.241799.

摘要

绝缘栅双极晶体管(insulated gate bipolar transistor，IGBT)是柔性直流输电技术的核心电能变换部件，其可靠性对于柔性直流输电系统安全稳定运行至关重要。基于传感器技术的IGBT器件状态检测方法，可以提高IGBT的运行可靠性，降低器件失效故障带来的经济损失。首先，探讨焊接型IGBT和压接型IGBT的劣化机理和主要故障模式异同点；然后，根据IGBT的不同封装形式，分别从嵌入式检测和非接触式检测两个方面详细综述基于温度、电流、应力波和应力应变等物理量的IGBT状态检测方法研究现状；基于研究现状，对现有研究的难点与不足进行总结，并展望IGBT器件状态检测技术的未来研究方向。

Abstract

The insulated gate bipolar transistor (IGBT) is the core power conversion component of flexible direct current transmission technology

and its reliability is crucial for the safe and stable operation of flexible direct current transmission systems. Sensor-based methods for detecting the status of IGBT devices can improve their operational reliability and reduce the economic losses caused by device failures. This paper first explores the similarities and differences in the degradation mechanisms and main failure modes of soldered IGBTs and press-pack IGBTs. Then

based on the various packaging forms of IGBTs

a detailed review of the research status of IGBT condition monitoring methods is presented from two perspectives: embedded detection and non-contact detection

focusing on physical parameters such as temperature

current

stress waves

and stress-strain. Based on the current state of research

this paper summarizes the challenges and limitations of existing studies and discusses future research directions for IGBT status detection technology.

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