李现兵, 韩佳桐, 姚鹏, et al. A Low-stress Elastic Press-pack Model and Simulation for DS Type Power Semiconductor Modules[J]. 2026, 46(2): 744-755.
DOI:
李现兵, 韩佳桐, 姚鹏, et al. A Low-stress Elastic Press-pack Model and Simulation for DS Type Power Semiconductor Modules[J]. 2026, 46(2): 744-755. DOI: 10.13334/j.0258-8013.pcsee.241428.
A Low-stress Elastic Press-pack Model and Simulation for DS Type Power Semiconductor Modules
This article proposes a new electrode technology for reversed S (DS) type press packing module
which integrates electrical and thermal conductivity
elasticity
and low inductance. It combines the elasticity of disc spring components with the electrical conductivity
thermal conductivity
and low inductance of convex rigid electrodes. Based on the new DS type electrode
a basic structural form
simulation model
manufacturing process
and material selection of a low-stress elastic press-pack power module are designed. A detailed introduction is given to the model and the multi-physics simulation
manufacturing process
voltage resistance and static performance testing of a new single-chip module designed based on 4500V silicon-based IGBT and fast recovery diode (FRD) chips. Preliminary test results show that the single-chip module based on DS type elastic electrodes has good comprehensive press-pack performance and can provide a basic electrode model for the packaging design of 4500V/3000A and higher rated modules in the future.