Thermal-electrical-force Properties of Liquid Crystalline Epoxy for High-voltage High-power IGBT Potting Application

WANG Zhengdong; LIU Chenxin; YANG Ganqiu; LIU Botao; SHEN Jiayi; CHENG Yonghong

doi:10.13334/j.0258-8013.pcsee.241217

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Thermal-electrical-force Properties of Liquid Crystalline Epoxy for High-voltage High-power IGBT Potting Application

更新时间：2026-07-13

- Thermal-electrical-force Properties of Liquid Crystalline Epoxy for High-voltage High-power IGBT Potting Application
- Vol. 45, Issue 19, Pages: 7798-7809(2025)
- 作者机构：
  
  1. 西安建筑科技大学机电工程学院,陕西省,西安市,710055
  2. 电力设备电气绝缘国家重点实验室(西安交通大学),陕西省,西安市,710049
- 作者简介：
- 基金信息：
- DOI：10.13334/j.0258-8013.pcsee.241217
  CLC：
- Published：2025
- 稿件说明：
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WANG Zhengdong, LIU Chenxin, YANG Ganqiu, et al. Thermal-electrical-force Properties of Liquid Crystalline Epoxy for High-voltage High-power IGBT Potting Application[J]. 2025, 45(19): 7798-7809.
DOI：

WANG Zhengdong, LIU Chenxin, YANG Ganqiu, et al. Thermal-electrical-force Properties of Liquid Crystalline Epoxy for High-voltage High-power IGBT Potting Application[J]. 2025, 45(19): 7798-7809. DOI： 10.13334/j.0258-8013.pcsee.241217.

摘要

随着绝缘栅极双极型晶体管(insulated gate bipolar transistor，IGBT)持续朝着大功率和高电压方向发展，设备内部面临着高温过热、击穿故障、材料破裂等故障风险，为满足IGBT日益严苛的工作环境，亟须研发一种高性能的液晶环氧灌封材料。该文制备一种联苯型液晶环氧4

4-联苯二酚二缩水甘油醚(4

4-biphenyldiglycidyl ether，BP)，研究固化温度和共混双酚A环氧体系(EB-BP%)对BP电绝缘特性和热力学性能的影响规律。结果表明，BP与磺胺(sulfonamide，SAA)在170℃固化温度下(BS-170)表现出明显的球状液晶畴形貌，且BS-170的热导率(λ)和击穿场强(Eb)分别为0.397 W·m−1·K−1和47.403 kV·mm−1，比双酚A环氧分别提升67.5%和6%。BP与双酚A环氧共混体系中，EB-30的λ达到0.301 W·m−1·K−1，比双酚A环氧提升28.6%。此外，EB-30表现出优异的拉伸强度和断裂伸长率。因此，BP/EB作为IGBT封装材料时，整体性能更加优良。研究结果可为IGBT封装用新型高性能绝缘材料的研制提供一定思路和理论基础。

Abstract

As the insulated gate bipolar transistor (IGBT) continues to evolve toward high-power and high-voltage operation

the device is faced with the risk of temperature overheating

breakdown failures

material ruptures

and other failures inside the device. In order to meet the increasingly harsh operating environment of the IGBT

there is an urgent need to develop a high-performance liquid crystalline epoxy potting material. In this paper

a biphenyl-type liquid crystal epoxy 4

4-biphenyldiglycidyl ether (BP) is prepared

and the effect laws of curing temperature and co-mingled bisphenol A epoxy system (EB-BP%) on the electrical insulating properties and thermo-mechanical properties of BP are explored. The results show that BP with sulfonamide (SAA) exhibits a distinct spherical liquid crystalline domain morphology at a curing temperature of 170℃ (BS-170)

and the thermal conductivity (λ) and breakdown field strength (Eb) of BS-170 are 0.397 W·m−1·K−1 and 47.403 kV·mm−1

respectively

which are 67.5% and 6% higher than those of bisphenol A epoxy. The λ of EB-30 in the blended system of BP and bisphenol A epoxy reaches 0.301 W·m−1·K−1

which is 28.6% higher than that of bisphenol A epoxy. In addition

EB-30 exhibits excellent tensile strength and elongation at break. Therefore

BP/EB shows better overall performance when used as an IGBT encapsulation material. This study can provide effective ideas and theoretical basis for the development of new high-performance insulating materials for IGBT encapsulation.

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