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A Method for Suppressing Junction Temperature Fluctuation of SiC MOSFET Based on Equivalent Gate Resistance Control
Power Electronics | 更新时间:2026-02-01
    • A Method for Suppressing Junction Temperature Fluctuation of SiC MOSFET Based on Equivalent Gate Resistance Control

    • This article introduces the research progress in the reliability field of silicon carbide MOSFETs, and relevant experts propose equivalent gate resistance control and active thermal management methods to provide a solution to the problem of junction temperature fluctuations under non-stationary operating conditions.
    • Proceedings of the CSEE   Vol. 45, Issue 12, Pages: 4858-4869(2025)
    • DOI:10.13334/j.0258-8013.pcsee.241143    

      CLC: TM46
    • Received:17 May 2024

      Published Online:06 November 2024

      Published:20 June 2025

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  • Ruoyin WANG, Hong ZHENG. A Method for Suppressing Junction Temperature Fluctuation of SiC MOSFET Based on Equivalent Gate Resistance Control[J]. Proceedings of the CSEE, 2025, 45(12): 4858-4869. DOI: 10.13334/j.0258-8013.pcsee.241143.

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Related Institution

State Key Laboratory of Power Transmission Equipment Technology (School of Electrical Engineering, Chongqing University), Shapingba District
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South China University of Technology
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