A Method for Suppressing Junction Temperature Fluctuation of SiC MOSFET Based on Equivalent Gate Resistance Control
Power Electronics|更新时间:2026-02-01
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A Method for Suppressing Junction Temperature Fluctuation of SiC MOSFET Based on Equivalent Gate Resistance Control
“This article introduces the research progress in the reliability field of silicon carbide MOSFETs, and relevant experts propose equivalent gate resistance control and active thermal management methods to provide a solution to the problem of junction temperature fluctuations under non-stationary operating conditions.”
Proceedings of the CSEEVol. 45, Issue 12, Pages: 4858-4869(2025)
作者机构:
江苏大学电气信息工程学院, 江苏省 镇江市 212013
作者简介:
基金信息:
National Natural Science Foundation of China(52077098)
Ruoyin WANG, Hong ZHENG. A Method for Suppressing Junction Temperature Fluctuation of SiC MOSFET Based on Equivalent Gate Resistance Control[J]. Proceedings of the CSEE, 2025, 45(12): 4858-4869.
DOI:
Ruoyin WANG, Hong ZHENG. A Method for Suppressing Junction Temperature Fluctuation of SiC MOSFET Based on Equivalent Gate Resistance Control[J]. Proceedings of the CSEE, 2025, 45(12): 4858-4869. DOI: 10.13334/j.0258-8013.pcsee.241143.
A Method for Suppressing Junction Temperature Fluctuation of SiC MOSFET Based on Equivalent Gate Resistance Control